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PDF APM4542 Data sheet ( Hoja de datos )
| Número de pieza | APM4542 | |
| Descripción | Dual Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics Coropration | |
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APM4542
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
Pin Description
• N-Channel
30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V
RDS(ON)=22mΩ(typ.) @ VGS=4.5V
• P-Channel
-30V/-5.5A,RDS(ON)=35mΩ(typ.) @ VGS=-10V
RDS(ON)=51mΩ(typ.) @ VGS=-4.5V
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• SO-8 Package
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
SO-8
D1 D1
S2
G2
G1
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
S1
N-Channel MOSFET
D2 D2
P-Channel MOSFET
Ordering and Marking Information
APM4542
APM4542 K :
Lead Free Code
Handling Code
Temp. Range
Package Code
APM4542
XXXXX
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Orginal Device
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003
1
www.anpec.com.tw
1 page  
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APM4542
Typical Characteristics (Cont.)
N-Channel
On-Resistance vs. Gate-to-Source Voltage
0.8
0.7
I = 7A
D
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 2 4 6 8 10
VGS-Gate-to-Source Voltage (V)
On-Resistaence vs. Junction Temperature
1.8
1.6
V = 10V
GS
I = 7A
DS
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
10
V =15V
DS
8
I =7A
DS
Gate Charge
6
4
2
0
0 4 8 12 16 20
QG-Total Gate Charge (nC)
Capacitance Characteristics
1200
1000
800
Frequency=1MHz
Ciss
600
400
200 Coss
Crss
0
0 5 10 15 20 25 30
VDS-Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003
5
www.anpec.com.tw
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APM4542
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Pre-heat temperature
183°C
Peak temperature
Classification Reflow Profiles
Time
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
Preheat temperature 125 ± 25°C)
120 seconds max
Temperature maintained above 183°C
60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
Time 25°C to peak temperature
6 minutes max.
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003
11
www.anpec.com.tw
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet APM4542.PDF ] | |
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