CM800E2Z-66H PDF даташит
Спецификация CM800E2Z-66H изготовлена «Mitsubishi Electric Semiconductor» и имеет функцию, называемую «HIGH POWER SWITCHING USE». |
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Детали детали
Номер произв | CM800E2Z-66H |
Описание | HIGH POWER SWITCHING USE |
Производители | Mitsubishi Electric Semiconductor |
логотип |
4 Pages
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MITSUBISHI HVIGBT MODULES
CM800E2Z-66H
HIGH POWER SWITCHING USE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM800E2Z-66H
q IC ................................................................... 800A
q VCES ....................................................... 3300V
q Insulated Type
q 1-elements in a pack (for brake)
APPLICATION
DC choppers, Dynamic braking choppers.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190
171
57±0.25
57±0.25
6 - M8 NUTS
C
C C K (C)
C CC
G
E
E E A (E)
CM E E E
CIRCUIT DIAGRAM
EG
C
.com3 - M4 NUTS
20.25
79.4
41.25
61.5
61.5
13
8 - φ7MOUNTING HOLES
5.2
www.DataSheet4UHVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
15
40
LABEL
Mar. 2003
No Preview Available ! |
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MITSUBISHI HVIGBT MODULES
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800E2Z-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
—
—
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
VGE = 0V
VCE = 0V
DC, TC = 100°C
Pulse
Conditions
(Note 1)
Pulse
(Note 1)
TC = 25°C, IGBT part
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Ratings
3300
±20
800
1600
800
1600
10400
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
2.2
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th)
Gate-emitter
threshold voltage
IC = 80mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
—
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 125°C
IC = 800A, VGE = 15V
(Note 4)
—
—
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
—
—
—
QG Total gate charge
VCC = 1650V, IC = 800A, VGE = 15V
—
td (on)
Turn-on delay time
VCC = 1650V, IC = 800A
—
tr Turn-on rise time
VGE1 = VGE2 = 15V
—
td (off)
Turn-off delay time
RG = 2.5Ω
—
tf Turn-off fall time
Resistive load switching operation
—
VEC (Note 2) Emitter-collector voltage
IE = 800A, VGE = 0V
—
trr (Note 2) Reverse recovery time
IE = 800A
—
Qrr (Note 2) Reverse recovery charge
die / dt = –1600A / µs
—
Rth(j-c)Q
Rth(j-c)R
Thermal resistance
Junction to case, IGBT part
Junction to case, FWDi part
—
—
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied (Per 2/3 module) —
VFM Forward voltage
IF = 800A, Clamp diode part
—
trr
Reverse recovery time
IF = 800A
—
Qrr
Reverse recovery charge
dif / dt = –1600A / µs, Clamp diode part
—
Rth(j-c)
Rth(c-f)
Thermal resistance
Contact thermal resistance
Junction to case, Clamp diode part
Case to fin, conductive grease applied (Per 1/3 module)
—
—
mNote 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
o2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
.c3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
www.DataSheet4UHVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Limits
Typ
—
6.0
—
3.80
4.00
120
12.0
3.6
5.7
—
—
—
—
2.80
—
270
—
—
0.008
3.00
—
270
—
0.008
Max
10
7.5
0.5
4.94
—
—
—
—
—
1.60
2.00
2.50
1.00
3.64
1.40
—
0.012
0.024
—
3.90
1.40
—
0.024
—
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
V
µs
µC
K/W
K/W
Mar. 2003
No Preview Available ! |
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800E2Z-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
1600
1200
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj=25°C
VGE=14V
VGE=15V
VGE=20V
VGE=13V
VGE=12V
VGE=11V VGE=10V
800
VGE=9V
400
VGE=8V
VGE=7V
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
1600
VCE=10V
1200
800
400
Tj = 25°C
Tj = 125°C
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE=15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 1600A
6 IC = 800A
4
2
IC = 320A
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
8
6
.com4
t4U2
e Tj = 25°C
e Tj = 125°C
h0
0 400 800 1200 1600
www.DataS EMITTER CURRENT IE (A)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
103
7 VGE = 0V, Tj = 25°C
5 Cies, Coes : f = 100kHz
3 Cres : f = 1MHz
2
Cies
102
7
5
3
2
101 Coes
7
5
3
2
Cres
100
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003
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CM800E2Z-66H | HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor |
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