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CM800E2Z-66H PDF даташит

Спецификация CM800E2Z-66H изготовлена ​​​​«Mitsubishi Electric Semiconductor» и имеет функцию, называемую «HIGH POWER SWITCHING USE».

Детали детали

Номер произв CM800E2Z-66H
Описание HIGH POWER SWITCHING USE
Производители Mitsubishi Electric Semiconductor
логотип Mitsubishi Electric Semiconductor логотип 

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CM800E2Z-66H Даташит, Описание, Даташиты
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM800E2Z-66H
HIGH POWER SWITCHING USE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM800E2Z-66H
q IC ................................................................... 800A
q VCES ....................................................... 3300V
q Insulated Type
q 1-elements in a pack (for brake)
APPLICATION
DC choppers, Dynamic braking choppers.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190
171
57±0.25
57±0.25
6 - M8 NUTS
C
C C K (C)
C CC
G
E
E E A (E)
CM E E E
CIRCUIT DIAGRAM
EG
C
.com3 - M4 NUTS
20.25
79.4
41.25
61.5
61.5
13
8 - φ7MOUNTING HOLES
5.2
www.DataSheet4UHVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
15
40
LABEL
Mar. 2003









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CM800E2Z-66H Даташит, Описание, Даташиты
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800E2Z-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
VGE = 0V
VCE = 0V
DC, TC = 100°C
Pulse
Conditions
(Note 1)
Pulse
(Note 1)
TC = 25°C, IGBT part
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Ratings
3300
±20
800
1600
800
1600
10400
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
2.2
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
Gate-emitter
threshold voltage
IC = 80mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 125°C
IC = 800A, VGE = 15V
(Note 4)
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
QG Total gate charge
VCC = 1650V, IC = 800A, VGE = 15V
td (on)
Turn-on delay time
VCC = 1650V, IC = 800A
tr Turn-on rise time
VGE1 = VGE2 = 15V
td (off)
Turn-off delay time
RG = 2.5
tf Turn-off fall time
Resistive load switching operation
VEC (Note 2) Emitter-collector voltage
IE = 800A, VGE = 0V
trr (Note 2) Reverse recovery time
IE = 800A
Qrr (Note 2) Reverse recovery charge
die / dt = –1600A / µs
Rth(j-c)Q
Rth(j-c)R
Thermal resistance
Junction to case, IGBT part
Junction to case, FWDi part
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied (Per 2/3 module) —
VFM Forward voltage
IF = 800A, Clamp diode part
trr
Reverse recovery time
IF = 800A
Qrr
Reverse recovery charge
dif / dt = –1600A / µs, Clamp diode part
Rth(j-c)
Rth(c-f)
Thermal resistance
Contact thermal resistance
Junction to case, Clamp diode part
Case to fin, conductive grease applied (Per 1/3 module)
mNote 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
o2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
.c3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
www.DataSheet4UHVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Limits
Typ
6.0
3.80
4.00
120
12.0
3.6
5.7
2.80
270
0.008
3.00
270
0.008
Max
10
7.5
0.5
4.94
1.60
2.00
2.50
1.00
3.64
1.40
0.012
0.024
3.90
1.40
0.024
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
V
µs
µC
K/W
K/W
Mar. 2003









No Preview Available !

CM800E2Z-66H Даташит, Описание, Даташиты
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800E2Z-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
1600
1200
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj=25°C
VGE=14V
VGE=15V
VGE=20V
VGE=13V
VGE=12V
VGE=11V VGE=10V
800
VGE=9V
400
VGE=8V
VGE=7V
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
1600
VCE=10V
1200
800
400
Tj = 25°C
Tj = 125°C
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE=15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 1600A
6 IC = 800A
4
2
IC = 320A
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
8
6
.com4
t4U2
e Tj = 25°C
e Tj = 125°C
h0
0 400 800 1200 1600
www.DataS EMITTER CURRENT IE (A)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
103
7 VGE = 0V, Tj = 25°C
5 Cies, Coes : f = 100kHz
3 Cres : f = 1MHz
2
Cies
102
7
5
3
2
101 Coes
7
5
3
2
Cres
100
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003










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Mitsubishi Electric Semiconductor

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