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G4BC30UD PDF даташит

Спецификация G4BC30UD изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «IRG4BC30UD».

Детали детали

Номер произв G4BC30UD
Описание IRG4BC30UD
Производители International Rectifier
логотип International Rectifier логотип 

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G4BC30UD Даташит, Описание, Даташиты
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PD 91453B
IRG4BC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
TO-220AB
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
23
12
92
92
12
92
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
1.2
2.5
------
80
------
Units
°C/W
g (oz)
1
4/17/00









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G4BC30UD Даташит, Описание, Даташиты
IRG4BC30UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ----
VCE(on)
Collector-to-Emitter Saturation Voltage ----
----
----
VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ----
gfe Forward Transconductance T 3.1
ICES
Zero Gate Voltage Collector Current
----
----
VFM Diode Forward Voltage Drop
----
----
IGES Gate-to-Emitter Leakage Current ----
---- ---- V
0.63 ---- V/°C
1.95 2.1
2.52 ---- V
2.09 ----
---- 6.0
-11 ---- mV/°C
8.6 ---- S
---- 250 µA
---- 2500
1.4 1.7 V
1.3 1.6
---- ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 12A
VGE = 15V
IC = 23A
See Fig. 2, 5
IC = 12A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 12A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
---- 50 75
---- 8.1 12 nC
---- 18 27
---- 40 ----
---- 21 ---- ns
---- 91 140
---- 80 130
---- 0.38 ----
---- 0.16 ---- mJ
---- 0.54 0.9
---- 40 ----
---- 22 ---- ns
---- 120 ----
---- 180 ----
---- 0.89 ---- mJ
---- 7.5 ---- nH
---- 1100 ----
---- 73 ---- pF
---- 14 ----
---- 42 60 ns
---- 80 120
---- 3.5 6.0 A
---- 5.6 10
---- 80 180 nC
---- 220 600
---- 180 ---- A/µs
---- 120 ----
Conditions
IC = 12A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 12A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 12A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
IF = 12A
TJ = 125°C 15
TJ = 25°C See Fig.
VR = 200V
TJ = 125°C
16 di/dt 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
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G4BC30UD Даташит, Описание, Даташиты
16
12
60% of rated
8 vo ltage
I
4
0
0.1
IRG4BC30UD
D uty cycle: 50%
TJ = 125°C
T sink = 90°C
G ate drive as specified
Turn-on losses include
effects of reverse recovery
Power D issipation = 21W
1 10
f, Frequency (kHz)
A
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25°C
TJ = 150°C
10
1
0.1
0.1
VGE = 15V
20µs PU LSE W ID TH A
1 10
VCE , C o lle ctor-to -Em itter Vo ltag e (V)
Fig. 2 - Typical Output Characteristics
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100
TJ = 150°C
10
TJ = 2 5 °C
1
V CC = 10V
0.1 5µs PU LSE W IDTH A
5 6 7 8 9 10 11 12
VG E , G a te -to -E m itte r V o lta g e (V )
Fig. 3 - Typical Transfer Characteristics
3










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Номер в каталогеОписаниеПроизводители
G4BC30UDIRG4BC30UDInternational Rectifier
International Rectifier

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