MR854 PDF даташит
Спецификация MR854 изготовлена «Taiwan Semiconductor» и имеет функцию, называемую «(MR850 - MR858) 2.0 Amps Fast Recovery Rectifiers». |
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Детали детали
Номер произв | MR854 |
Описание | (MR850 - MR858) 2.0 Amps Fast Recovery Rectifiers |
Производители | Taiwan Semiconductor |
логотип |
2 Pages
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MR850 THRU MR858
Features
3.0 AMPS. Fast Recovery Rectifiers
Voltage Range
50 to 800 Volts
Current
3.0 Amperes
DO-201AD
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, solderable per MIL-
STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260℃/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Weight: 1.2 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MR MR MR MR MR MR Units
850 851 852 854 856 858
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 V
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@TA = 55℃
I(AV)
3.0 A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
IFSM
150
A
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
1.25
1.3 V
Maximum DC Reverse Current @ TA=25℃
at Rated DC Blocking Voltage @ TA=100℃
IR
10 uA
200 uA
Maximum Reverse Recovery Time ( Note 1 ) Trr
100
150 nS
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance ( Note 3 )
Operating Temperature Range
Cj
RθJA
TJ
60
45
-65 to +150
pF
OC/W
℃
Storage Temperature Range
TSTG
-65 to +15w0ww.DataSheet4U.℃com
Notes:1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
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RATINGS AND CHARACTERISTIC CURVES (MR850 THRU MR858)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
4
FIG.2- MAXIMUM NON-REPETITIVE PEAK SURGE
CURRENT
150
3 100
2
Single Phase
Half Wave 60Hz
1 Resistive or
Inductive Load
0.375"(9.5mm)
Lead Length
0
0 25
50 75 100
AMBIENT TEMPERATURE. (oC)
125
150
FIG.3- TYPICAL FORWARD CHARACTERISTICS
20
10
175
3.0
1.0
50
Tj=250C
8.3ms Single Half Sine Wave
JEDEC Method
10
1
5 10
NUMBER OF CYCLES AT 60Hz
50
FIG.4- TYPICAL JUNCTION CAPACITANCE
90
80
60
40
100
0.3
Tj=25oC
0.1 Pulse Width=300 s
1% Duty Cycle
.03
.01
0.4
0.6
0.8 1.0 1.2
1.4
FORWARD VOLTAGE. (V)
1.6 1.8
20
0
12
Tj=250C
46
10 20
REVERSE VOLTAGE. (V)
40 60
100
FIG.5- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
50Vdc
(approx)
(-)
DUT
1W OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
+0.5A
0
-0.25A
trr
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
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