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PDF MRF5812G Data sheet ( Hoja de datos )
| Número de pieza | MRF5812G | |
| Descripción | Bipolar Junction Transistor | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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MRF5812, R1, R2
MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• Low Noise - 2.5 dB @ 500 MHZ
• Associated Gain = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective SO-8 package
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Value
15
30
2.5
200
1.25
10
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
www.DataSheet4U.com
Rev A 9/2005
1 page  
8. 5.
1. 4.
MRF5812, R1, R2
MRF5812G, R1, R2
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MRF5812G.PDF ] | |
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