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даташит MRF5812G PDF ( Datasheet )

Datasheet Download - Advanced Power Technology

Номер произв MRF5812G
Описание Bipolar Junction Transistor
Производители Advanced Power Technology
логотип Advanced Power Technology логотип 



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MRF5812G Даташит, Описание, Даташиты
MRF5812, R1, R2
MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
Low Noise - 2.5 dB @ 500 MHZ
Associated Gain = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective SO-8 package
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Value
15
30
2.5
200
1.25
10
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
www.DataSheet4U.com
Rev A 9/2005









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MRF5812G Даташит, Описание, Даташиты
MRF5812, R1, R2
MRF5812G, R1, R2
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
(on)
HFE
Test Conditions
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, VBE = 0 Vdc)
Emitter Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc)
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
DYNAMIC
Symbol
COB
Ftau
Test Conditions
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
Min.
15
30
2.5
-
-
Value
Typ.
-
-
-
-
-
Max.
-
-
-
0.1
0.1
Unit
Vdc
Vdc
Vdc
mA
mA
50 200
Min.
-
-
Value
Typ.
1.4
5.0
Max.
2.0
-
Unit
pF
GHz
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005









No Preview Available !

MRF5812G Даташит, Описание, Даташиты
MRF5812, R1, R2
MRF5812G, R1, R2
FUNCTIONAL
Symbol
Test Conditions
NFmin
G
NF
G
U max
MSG
|S21|2
Minimum Noise Figure
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
Power Gain @ Nfmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Min.
-
13
-
-
-
Value
Typ.
2.0
15.5
17.8
20
15
Max.
3.0
-
-
-
Unit
dB
dB
dB
dB
dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
(MHz)
100
300
500
1000
2000
3000
S11
|S11|
.579
.593
.598
.592
.615
.691
∠φ
-141
-173
175
158
115
72
S21
|S21|
24
8.93
5.14
2.64
1.55
1.10
∠φ
107
85
74
52
20
-5
S12
|S12|
.024
.045
.066
.132
.310
.518
∠φ
49
66
69
72
63
41
S22
|S22|
.397
.233
.248
.347
.531
.648
∠φ
-76
-103
-110
-119
-141
-172
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005










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