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Номер произв STTA112U
Описание TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
Производители ST Microelectronics
логотип ST Microelectronics логотип 



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STTA112U Даташит, Описание, Даташиты
® STTA112U
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
trr (typ)
VF (max)
1A
1200V
65ns
1.5V
FEATURES AND BENEFITS
SPECIFIC TO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING, DEMAGNETIZATION
AND RECTIFICATION
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATION
HIGH REVERSE VOLTAGE CAPABILITY
SMB
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes.
Due to their optimized switching performances
they also highly decrease power losses in any
associated switching IGBT or MOSFET in all
freewheel mode operations.
ABSOLUTE RATINGS (limiting values)
They are particularly suitable in motor control
circuitries, or in primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for the secondary of SMPS as high voltage
rectifier diodes.
Symbol
VRRM
IF(RMS)
IFRM
IFSM
Tstg
Tj
Parameter
Value
Repetitive peak reverse voltage
1200
RMS forward current
6
Repetitive peak forward current
tp = 5 µs F = 5kHz square
10
Surge non repetitive forward current tp = 10ms sinusoidal
20
Storage temperature range
- 65 to + 150
Maximum operating junction temperature
125
Unit
V
A
A
A
°C
°C
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 5A
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STTA112U Даташит, Описание, Даташиты
STTA112U
THERMAL AND POWER DATA
Symbol
Rth(j-I)
P1
Parameter
Junction to lead thermal resistance
Conduction power dissipation
Pmax
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Test conditions
IF(AV) = 0.8A δ = 0.5
Tlead= 93°C
Tlead= 90°C
Value
23
1.4
1.5
Unit
°C/W
W
W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VF * Forward voltage drop
IR ** Reverse leakage current
Vto
Rd
Test pulses :
Threshold voltage
Dynamic resistance
* tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%
Test conditions
IF = 1A
Tj = 25°C
Tj = 125°C
VR = 0.8 x
VRRM
Tj = 25°C
Tj = 125°C
Ip < 3.IF(AV) Tj = 125°C
Min Typ Max Unit
1.65
1.1 1.5
V
10 µA
90 300
1.15 V
350 m
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + Rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min Typ Max Unit
trr Reverse recovery Tj = 25°C
time IF = 0.5 A IR = 1A Irr = 0.25A
IF = 1 A dIF/dt =-50A/µs VR = 30V
ns
65
115
IRM Maximum recovery Tj = 125°C VR = 600V IF = 1A
current
dIF/dt = -8 A/µs
dIF/dt = -50 A/µs
A
1.8
5
S factor Softness factor
Tj = 125°C VR = 600V IF =1A
dIF/dt = -50 A/µs
-
0.7
TURN-ON SWITCHING
Symbol
tfr
VFp
Parameter
Forward recovery time
Peak forward voltage
Test conditions
Min Typ Max Unit
Tj = 25°C
IF = 1 A, dIF/dt = 8 A/µs
measured at 1.1 × VF max
900 ns
35 V
2/8









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STTA112U Даташит, Описание, Даташиты
Fig. 1: Conduction losses versus average current.
STTA112U
Fig. 2: Forward voltage drop versus forward cur-
rent (Maximum values).
P1(W)
1.50
1.25
δ = 0.1
δ = 0.2 δ = 0.5
1.00
0.75
δ=1
0.50
0.25
IF(av) (A)
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
IFM(A)
50.0
Tj=125°C
10.0
1.0
VFM(V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 3: Relative variation of thermal transient im-
pedance junction to lead versus pulse duration.
Fig. 4: Peak reverse recovery current versus dIF/dt
(90% confidence).
IRM(A)
15.0
12.5
10.0
IF=2*IF(av)
VR=600V
Tj=125°C
7.5
5.0
2.5
0.0
0
dIF/dt(A/µs)
20 40 60 80 100 120 140 160 180 200
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
Fig. 6: Softness factor (tb/ta) versus dIF/dt (Typical
values).
trr(ns)
300
250
IF=2*IF(av)
VR=600V
Tj=125°C
200
150
100
50
dIF/dt(A/µs)
0
0 20 40 60 80 100 120 140 160 180 200
S factor
1.00
0.80
IF<2*IF(av)
VR=600V
Tj=125°C
0.60
0.40
0
dIF/dt(A/µs)
20 40 60 80 100 120 140 160 180 200
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