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PDF MRF9030R1 Data sheet ( Hoja de datos )
| Número de pieza | MRF9030R1 | |
| Descripción | RF POWER FIELD EFFECT TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9030/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
• Typical Two–Tone Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — –32.5 dBc
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRF9030R1
MRF9030SR1
945 MHz, 30 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF9030R1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 360C–05, STYLE 1
NI–360S
MRF9030SR1
MRF9030R1
MRF9030SR1
Symbol
VDSS
VGS
PD
PD
Tstg
TJ
MRF9030R1
MRF9030SR1
Symbol
RθJC
Value
68
–0.5, +15
92
0.53
117
0.67
–65 to +200
200
Class
1 (Minimum)
M1 (Minimum)
Max
1.9
1.5
Unit
Vdc
Vdc
Watts
W/°C
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF9030R1 MRF9030SR1
1
1 page  
TYPICAL CHARACTERISTICS
20
Gps
19
η
18
17
16
15 IMD
14 IRL
VDD = 26 Vdc
Pout = 30 W (PEP)
IDQ = 250 mA
Two-Tone, 100 kHz Tone Spacing
50
45
40
35
-30
-32
-34
13 -36
12 -38
930 935 940 945 950 955 960
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
-10
-12
-14
-16
-18
20
19.5 IDQ = 375 mA
19 300 mA
18.5 250 mA
200 mA
18
17.5
17
1
VDD = 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
-20
VDD = 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
-30
IDQ = 200 mA
-40
300 mA
250 mA
-50
375 mA
-60
1
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
0
VDD = 26 Vdc
-10 IDQ = 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
-20
-30
-40 3rd Order
-50
5th Order
-60
7th Order
-70
1 10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
22
VDD = 26 Vdc
20 IDQ = 250 mA
f = 945 MHz
18
Gps
60
50
40
16 30
14 η
20
12 10
10
0.1
1
0
10 100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
MOTOROLA RF DEVICE DATA
MRF9030R1 MRF9030SR1
5
5 Page 
PACKAGE DIMENSIONS
B
B
(FLANGE)
E
A
2X Q
G aaa M T A M B M
1
3
2
2X D
bbb M T A M B M
2X K
N
(LID)
ccc M T A M B M
C
R
(LID)
ccc M T A M B M
F
H
M
(INSULATOR)
A
T
SEATING
PLANE
bbb M T A M B M
S
(INSULATOR)
aaa M T A M
BM
CASE 360B–05
ISSUE F
NI–360
MRF9030R1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.795 0.805
B 0.225 0.235
C 0.125 0.175
D 0.210 0.220
E 0.055 0.065
F 0.004 0.006
G 0.562 BSC
H 0.077 0.087
K 0.220 0.250
M 0.355 0.365
N 0.357 0.363
Q 0.125 0.135
R 0.227 0.233
S 0.225 0.235
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
MILLIMETERS
MIN MAX
20.19 20.45
5.72 5.97
3.18 4.45
5.33 5.59
1.40 1.65
0.10 0.15
14.28 BSC
1.96 2.21
5.59 6.35
9.02 9.27
9.07 9.22
3.18 3.43
5.77 5.92
5.72 5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
B
A
(FLANGE)
1
B
(FLANGE)
2X D
2
2X K
bbb M T A M B M
N
(LID)
ccc M T A M B M
E
C
PIN 3
M
T
SEATING
PLANE
(INSULATOR)
bbb M T A M B M
R
(LID)
ccc M T A M B M
F
H
S
(INSULATOR)
aaa M T A M
BM
CASE 360C–05
ISSUE D
NI–360S
MRF9030SR1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.375 0.385
B 0.225 0.235
C 0.105 0.155
D 0.210 0.220
E 0.035 0.045
F 0.004 0.006
H 0.057 0.067
K 0.085 0.115
M 0.355 0.365
N 0.357 0.363
R 0.227 0.23
S 0.225 0.235
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
9.53 9.78
5.72 5.97
2.67 3.94
5.33 5.59
0.89 1.14
0.10 0.15
1.45 1.70
2.16 2.92
9.02 9.27
9.07 9.22
5.77 5.92
5.72 5.97
0.13 REF
0.25 REF
0.38 REF
MOTOROLA RF DEVICE DATA
MRF9030R1 MRF9030SR1
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF9030R1.PDF ] | |
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