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PDF FDM606P Data sheet ( Hoja de datos )
| Número de pieza | FDM606P | |
| Descripción | P-Channel 1.8V Logic Level Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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July 2002
FDM606P
P-Channel 1.8V Logic Level Power Trench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance. These devices are well suited for portable
electronics applications.
Applications
• Load switch
• Battery charge
• Battery disconnect circuits
Features
• Fast switching
• rDS(ON) = 0.026Ω (Typ), VGS = -4.5V
• rDS(ON) = 0.033Ω (Typ), VGS = -2.5V
• rDS(ON) = 0.052Ω (Typ), VGS = -1.8V
Bottomview 3 X 2 (8 Lead)
SinglePad
ShortPin
S
D
D
D
D
G
1
MicroFET 3x2-8
D
D
D
S
MOSFET Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = - 4.5V)
Continuous (TC = 100oC, VGS = - 2.5V)
Continuous (TC = 100oC, VGS = -1.8V)
Pulsed
PD
Power dissipation
Derate above 25°C
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case (Note1)
Thermal Resistance Junction to Ambient (Note 2)
Package Marking and Ordering Information
Device Marking
.06P
Device
FDM606P
Package
MicroFET3x2
Reel Size
178 mm
18
27
36
45
Ratings
-20
±8
-6.8
-3.8
-3.0
Figure 4
1.92
15.4
-55 to 150
Units
V
V
A
A
A
W
mW/oC
oC
6.0 oC/W
65 oC/W
Tape Width
8 mm
Quantity
3000
©2002 Fairchild Semiconductor Corporation
FDM606P Rev. C
1 page  
Typical Characteristic (Continued) TA = 25°C unless otherwise noted
4000
CISS = CGS + CGD
6
VDD = -10V
1000
CRSS = CGD
COSS ≅ CDS + CGD
VGS = 0V, f = 1MHz
100
0.1
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 11. Capacitance vs Drain to Source
Voltage
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = -6.8A
ID = -1A
6 12 18
Qg, GATE CHARGE (nC)
24
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
400
VGS = -4.5V, VDD = -10V, ID = -3.0A
300
td(OFF)
200
tf
tr
100
td(ON)
0
0
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
Figure 13. Switching Time vs Gate Resistance
©2001 Fairchild Semiconductor Corporation
FDM606P Rev. C,
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDM606P.PDF ] | |
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