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MR16R0826BN1 PDF даташит

Спецификация MR16R0826BN1 изготовлена ​​​​«Samsung semiconductor» и имеет функцию, называемую «(MR16R0824(6/8/C/G)BN1) RAMBUS MODULE».

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Номер произв MR16R0826BN1
Описание (MR16R0824(6/8/C/G)BN1) RAMBUS MODULE
Производители Samsung semiconductor
логотип Samsung semiconductor логотип 

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MR16R0826BN1 Даташит, Описание, Даташиты
SERIAL PRESENCE DETECT
MR16R0824(6/8/C/G)BN1
RAMBUS MODULE
RIMM SPD Specification
based on 128M RDRAM(B-die, 32s banks)
Version 1.1
October 2000
Change History
Version 1.1 (Oct. 00)
Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version.
-1-
Version 1.1 Oct. 2000









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MR16R0826BN1 Даташит, Описание, Даташиты
SERIAL PRESENCE DETECT
MR16R0824(6/8/C/G)BN1
RAMBUS MODULE
MR16R0824(6/8)BN1-CK8/CK7/CG6
• Feature : Single Sided Module & 1,250 mil height
• Composition : 8Mx16 *4(6/8)pcs
• Used component type & part number
1 Normal Package (K4R271669B-NCK8/NCK7/NCG6)
• # of banks in component : 32s banks (Doubled with Split Banks)
• Refresh : 16K/32ms
MR16R082C(G)BN1-CK8/CK7/CG6
• Feature : Double Sided Module & 1,250 mil height
• Composition : 8Mx16 *12(16)pcs
• Used component type & part number
1 Normal Package (K4R271669B-NCK8/NCK7/NCG6)
2 Mirrored Package (K4R271669B-MCK8/MCK7/MCG6)
• # of banks in component :32s banks (Doubled with Split Banks)
• Refresh : 16K/32ms
Contents ;
Byte #
(Dec)
Described Function
Option
Field
Width
0 SPD Revision Level
1 Total Number of Bytes in the SPD
2 Device Type
3 Module Type
4 Row Address Bits[3:0], Column Address Bits[3:0]
5 Bank Address Bits and Type
6 Refresh Bank Bits
7 Refresh Period(=tREF)
8 Protocol Version
9 Misc. Device Configuration Field
10 Minimum Precharge to RAS time(=tRP-R,Min )
11 Minimum RAS to Precharge time(=tRAS-R,Min)
12 Minimum RAS to CAS time(=tRCD-R,Min)
13 Minimum RAS to RAS time(=tRR-R,Min)
14 Minimum Precharge to Precharge time(=tPP-R,Min)
15 Min tCYCLE for Range A
16 Max tCYCLE for Range A
8
8
8
8
4,4
8
3
8
8
8
5
6
5
5
5
8
8
17 tCDLY Range for Range A
8
Units
LUT
LUT
LUT
LUT
bits
LUT
bits
ms
LUT
n/a
1/fRAS
1/fRAS
1/fRAS
1/fRAS
1/fRAS
128ps
128ps
tCYCLE
Supported Function
K8 K7 G6
SPD Revision 1.0
256 Bytes
Direct RDRAM
RIMM Module
9 bits, 6 bits
32s banks
32 Refresh Bank Sets
32ms
Protocol Version 1
DQS=1.5, no -LP, S28, S3
8cycles 8cycles 8cycles
20cycles 20cycles 20cycles
10cycles 8cycles 8cycles
8cycles 8cycles 8cycles
8cycles 8cycles 8cycles
2.50ns 2.80ns 3.33ns
3.83ns 3.83ns 3.83ns
5tCYCLE 5tCYCLE 5tCYCLE
~ 9tCYCLE ~ 9tCYCLE ~ 9tCYCLE
18 tCLS and tCAS Range for Range A
19 Min tCYCLE for Range B
20 Max tCYCLE for Range B
21 tCDLY Range for Range B
22 tCLS and tCAS Range for Range B
23 Min tCYCLE for Range C
24 Max tCYCLE for Range C
25 tCDLY Range for Range C
26 tCLS and tCAS Range for Range C
27 Min tCYCLE for Range D
28 Max tCYCLE for Range D
29 tCDLY Range for Range D
30 tCLS and tCAS Range for Range D
31 Power Down Exit Max.time, Phase A(=tPDNXA,Max)
32 Power Down Exit Max.time, Phase B(=tPDNXB,Max)
33 Nap Exit Max.time, Phase A(=tNAPXA,Max)
34 Nap Exit Max.time, Phase B(=tNAPXB,Max)
35 fIMIN[11:8]
fIMAX[11:8]
8 tCYCLE
8 128ps
2tCYCLE for tCLS & tCAS
RFU
8 128ps
8 tCYCLE
8 tCYCLE
8 128ps
8 128ps
8 tCYCLE
8 tCYCLE
8 128ps
RFU
RFU
RFU
RFU
RFU
RFU
RFU
RFU
8 128ps
RFU
8 tCYCLE
8 tCYCLE
8 us
RFU
RFU
4us
8 64tCYCLE
8 ns
9000tCYCLE
50ns
8 ns
40ns
4
4
MHz
261MHz 261MHz 261MHz
400MHz 357MHz 300MHz
36 fIMIN[7:0]
37 fIMAX[7:0]
38 ODF mapping
8 MHz 261MHz 261MHz 261MHz
8 MHz 400MHz 357MHz 300MHz
--
-
Hex Value
K8 K7 G6
02h
08h
01h
01h
96h
C5h
05h
20h
02h
05h
08h 08h 08h
14h 14h 14h
0Ah 08h 08h
08h 08h 08h
08h 08h 08h
13h 15h 1Ah
1Eh 1Eh 1Eh
Note
1
1
1
1
1
1
3
59h 59h 59h
AAh
00h
00h
00h
00h
00h
00h
00h
00h
00h
00h
00h
00h
04h
8Dh
32h
28h
11h 11h 11h
2
2
2
2
2
2
2
2
2
2
2
2
05h 05h 05h
90h 65h 2Ch
00h
- 2 - Version 1.1 Oct. 2000









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MR16R0826BN1 Даташит, Описание, Даташиты
SERIAL PRESENCE DETECT
MR16R0824(6/8/C/G)BN1
RAMBUS MODULE
Byte #
(Dec)
Described Function
Option
Field
Width
39
40
41
42
43
44
45
46
47~49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65~71
72
73
74
75
76
77
78
79
80
81
Max. time between Current Control(=tCCTRL,Max)
Max. time between Temp. Calibration(=tTEMP,Max)
Min. time between Temp. Calibration Enable
and Command(=tTCEN,Min)
Maximum RAS to Precharge time(=tRAS-R,Max)
Maximum time that a Device can stay in Nap
Mode(=tNLIMIT,Max)
ACTREFPT[3:0], PCHREFPT[3:0]
CPCHREFPT_DC[3:0], RDREFPT_DC[3:0]
RETREFPT_DC[3:0], WRREFPT_DC[3:0]
Reserved
fRAS[11:8]
fRAS[7:0]
PMAX,HI, PMAX,LO, Tj
HeatSpreader, thermal sensor, Tplate
PSTBY,HI
PACTI,HI
PACTRW,HI
PSTBY,LO
PACTI,LO
PACTRW,LO
PNAP
PRESA (Reserved for a future thermal parameter)
PRESB (Reserved for a future thermal parameter)
Checksum for bytes 0 ~ 62
Module Manufacturer ID Code
...... Module Manufacturer ID Code
Module Manufacturer Location
Module Part Number(Memory module)
Module Part Number(Module Configuration)
Module Part Number(Data Bits)
...... Module Part Number(Data Bits)
Module Part Number(Feature)
Module Part Number(Module Density)
Module Part Number(Module Density)
...... Module Part Number(Module Density)
Module Part Number
(Refresh, # of banks in comp. & interface)
8
8
8
8
8
4,4
4,4
4,4
-
4
8
1,1,6
1,1,6
8
8
8
8
8
8
8
-
-
8
8
56
8
8
8
8
8
8
8
8
8
8
82 Module Part Number(# of component )
4d
6d
8d
12d
16d
83 Module Part Number(Component Revision)
84 Module Part Number(Package Type)
85 Module Part Number(PCB Revision)
86 Module Part Number(Hyphen)
87 Module Part Number(Power)
88 Module Part Number(tRAC & Speed)
89 Module Part Number(tRAC & Speed)
90 Module Part Number(RFU)
8
8
8
8
8
8
8
8
8
8
8
8
8
Units
ms
ms
tCYCLE
us
us
tCYCLE
tCYCLE
tCYCLE
-
MHz
MHz
°C
°C
1mA
2mA
8mA
1mA
2mA
8mA
128uA
-
-
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
Supported Function
K8 K7 G6
100ms
100ms
150tCYCLE
64us
10us
Hex Value
K8 K7 G6
64h
64h
Note
96h
40h
0Ah
6tCYCLE, 6tCYCLE
5tCYCLE, 5tCYCLE
5tCYCLE, 13tCYCLE
-
66h
55h
5Dh
00h
400MHz 357MHz 300MHz 01h 01h 01h
90h 65h 2Ch
0,0,100°C 0,0,100°C 0,0,100°C 24h 24h 24h
1,0, 92°C 1,0,92°C 1,0,92°C 9Ch 9Ch 9Ch
105mA 100mA 90mA 69h 64h 5Ah
165mA 155mA 140mA 52h 4Dh 46h
575mA 525mA 455mA 47h 41h 38h
80mA
80mA
80mA 50h 50h 50h
135mA 135mA 135mA 43h 43h 43h
410mA 410mA 410mA 33h 33h 33h
4.0mA 4.0mA 4.0mA 1Fh 1Fh 1Fh
- 00h
- 00h
- 86h 20h 99h
Samsung
CEh
Samsung
00h
Onyang Korea
01h
M 4Dh
R 52h
1 31h
6 36h
R 52h
Blank
20h
0 30h
8 38h
2 32h
3
3
3
3
3
3
3
3
3
3
3
3
3
4
6
8
C
G
B
N
1
- (Hyphen)
CCC
K KG
876
-
34h
36h
38h
43h
47h
42h
4Eh
31h
2Dh
43h 43h 43h
4Bh 4Bh 47h
38h 37h 36h
00h
3
3
3
3
3
3
3
3
3
3
3
3
3
- 3 - Version 1.1 Oct. 2000










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