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G4BC20KD схема включения Datasheet Download - International Rectifier

Номер произв G4BC20KD
Описание IRG4BC20KD
Производители International Rectifier
логотип International Rectifier логотип 
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G4BC20KD Даташит, Описание, Даташиты
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PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Short Circuit Rated UltraFast: Optimized for
C
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
G
E
n-channel
Industry standard TO-220AB package
Benefits
Latest generation 4 IGBTs offer highest power density
motor controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces the IRGBC20KD2 and IRGBC20MD2
products
For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
TO-220AB
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Max.
600
16
9.0
32
32
7.0
32
10
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.1
3.5
–––
80
–––
Units
°C/W
g (oz)
www.irf.com
1
4/24/2000

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G4BC20KD Даташит, Описание, Даташиты
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IRG4BC20KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 250µA
0.49 V/°C VGE = 0V, IC = 1.0mA
2.27 2.8
IC = 9.0A
VGE = 15V
3.01 V IC = 16A
See Fig. 2, 5
2.43
IC = 9.0A, TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-10 mV/°C VCE = VGE, IC = 250µA
2.9 4.3 S VCE = 100V, IC = 9.0A
— — 250 µA VGE = 0V, VCE = 600V
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
1.4 1.7 V IC = 8.0A
See Fig. 13
1.3 1.6
IC = 8.0A, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
34 51
IC = 9.0A
4.9 7.4 nC VCC = 400V
14 21
VGE = 15V
54
See Fig.8
34 ns TJ = 25°C
180 270
IC = 9.0A, VCC = 480V
72 110
VGE = 15V, RG = 50
0.34
Energy losses include "tail"
0.30 mJ and diode reverse recovery
0.64 0.96
See Fig. 9,10,14
10 — —
51
37
220
160
µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50, VCPK < 500V
TJ = 150°C,
See Fig. 11,14
ns IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
0.85 mJ and diode reverse recovery
7.5 nH Measured 5mm from package
450
61
14
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
37 55 ns TJ = 25°C See Fig.
55 90
TJ = 125°C 14
IF = 8.0A
3.5 5.0 A TJ = 25°C See Fig.
4.5 8.0
TJ = 125°C 15
VR = 200V
65 138 nC TJ = 25°C See Fig.
124 360
TJ = 125°C
16 di/dt = 200Aµs
240 A/µs TJ = 25°C See Fig.
210
TJ = 125°C 17
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G4BC20KD Даташит, Описание, Даташиты
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10
8
6
S qua re wave:
60% of rated
v olta ge
4
I
2 Ideal diodes
0
0.1
IRG4BC20KD
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P ow er Dis sipation = 13 W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100 100
TJ = 25 oC
TJ = 150 oC
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
TJ = 150 oC
TJ = 25 oC
VCC = 50V
5µs PULSE WIDTH
1
5 10 15 20
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3






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