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BT100-6 PDF даташит

Спецификация BT100-6 изготовлена ​​​​«IK Semiconductor» и имеет функцию, называемую «Sensitive Gate Silicon Controlled Rectifiers».

Детали детали

Номер произв BT100-6
Описание Sensitive Gate Silicon Controlled Rectifiers
Производители IK Semiconductor
логотип IK Semiconductor логотип 

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BT100-6 Даташит, Описание, Даташиты
et4U.comSensitive Gate Silicon Controlled Rectifiers
taSheFeatures
.DaRepetitive Peak Off-State Voltage : 400V
R.M.S On-State Current (IT(RMS)=0.8 A)
wwwLow On-State Voltage (1.2V(Typ.)@ITM)
BT100-6
General Description
mSensitive triggering SCR is suitable for the application
owhere gate current limited such as small motor control,
.cgate driver for large SCR, sensing and detecting circuits.
eet4UAbsolute Maximum Ratings (TJ=25unless otherwise specified)
hSymbol
Parameter
taSVDRM Repetitive Peak Off-state Voltage
IT(AV) Average On-State Current
.DaIT(RMS) R.M.S On-State Current
ITSM Surge On-State Current
wI2 t
wwPGM
omPG(AV)
U.cIFGM
et4VRGM
heTJ
www.DataSTSTG
t for Fusing
Forward Peak Gate Power
Dissipation
Forward Average Gate Power
Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Condition
Half Sine Wave : TC =74
All Conduction Angle
1/2 Cycle, 60Hz, Sine Wave Non-
Repetitive
t = 8.3ms
Ratings
400
0.5
0.8
Units
V
A
A
10 A
0.415
2
S
W
0.1 W
1A
5.0 V
-40 ~ 125
-40 ~ 150
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BT100-6 Даташит, Описание, Даташиты
BT100-6
Electrical Characteristics
Symbol
Items
IDRM
Repetitive Peak Off-
State Current
VTM
Peak On-State
Voltage(1)
IGT
Gate Trigger
Current(2)
VGT
Gate Trigger
Voltage(2)
Non-Trigger Gate
VGD Voltage(1)
dv/dt
Critical Rate of Rise
Off-State Voltage
Conditions
Ratings
Min Typ Max
V =VAK DRM,
or VRRM:RGK=1000
Tc=25
Tc=125
10
200
Unit
(ITM=1A, Peak)
VAK=6V, RL=100
VD=7V, RL=100
1.2 1.7
Tc=25
Tc=-40
200
500
Tc=25
Tc=-40
0.8
1.2
V
V
VAK=12V, RL=100
Tc=125
VD=Rated VDRM, Exponential wave-
form RGK=1000TJ=125
0.2 ━ ━
500 800
V
V/
di/dt
IH
Rth(j-c)
Rth(j-a)
Critical Rate of Rise
Off-State Voltage
IPK=20A ; PW=10;diG/dt=1A/
lgt=20mA
━ ━ 50
Holding Current
Thermal Impedance
Thermal Impedance
VAK=12V, Gate Open
Initiating Current=20mA Tc=25
Tc=-40
Junction to case
Junction to Ambient
2 5.0
10
60
150
A/
mA
/W
/W
Notes :
1. Pulse Width 1.0ms, Duty cycle 1%
2. Does not include RGK in measurement.
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BT100-6 Даташит, Описание, Даташиты
BT100-6
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Номер в каталогеОписаниеПроизводители
BT100-6Sensitive Gate Silicon Controlled RectifiersIK Semiconductor
IK Semiconductor
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