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PDF SPN03N60S5 Data sheet ( Hoja de datos )
| Número de pieza | SPN03N60S5 | |
| Descripción | Cool MOS Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPN03N60S5
VDS
RDS(on)
ID
600 V
1.4 Ω
0.7 A
SOT-223
4
3
2
1 VPS05163
Type
SPN03N60S5
Package
SOT-223
Ordering Code
Q67040-S4203
Marking
03N60S5
Maximum Ratings
Parameter
Continuous drain current
TA = 25 °C
TA = 70 °C
Pulsed drain current, tp limited by Tjmax
TA = 25 °C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TA = 25°C
Operating and storage temperature
Symbol
ID
ID puls
VGS
VGS
Ptot
Tj , Tstg
Value
0.7
0.4
3
±20
±30
1.8
-55... +150
Unit
A
V
W
°C
Rev. 2.1
Page 1
2004-03-30
1 page  
SPN03N60S5
1 Power dissipation
Ptot = f (TA)
1.9 SPN03N60S5
W
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
00 20 40 60 80 100 120 °C 160
TA
3 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 2
K/W
2 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA=25°C
10 1
A
10 0
10 -1
tp = 0.001 ms
tp = 0.01 ms
10 -2
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10
-3
10
0
10 1
10 2
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
8.5
A
V 10 3
VDS
10 1
10 0
D = 0.5
D = 0.2
10 -1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
10 -2
single pulse
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
Rev. 2.1
Page 5
7
6
9V
5
4
3
2
7V
1
00 4 8 12 16 20 V 26
VDS
2004-03-30
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SPN03N60S5.PDF ] | |
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