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STTA312B PDF даташит

Спецификация STTA312B изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE».

Детали детали

Номер произв STTA312B
Описание TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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STTA312B Даташит, Описание, Даташиты
® STTA312B
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
trr (typ)
VF (max)
3A
1200 V
65 ns
1.7 V
FEATURES AND BENEFITS
SPECIFICTO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING, DEMAGNETIZA-
TION AND RECTIFICATION
ULTRA-FAST, SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES AND
PARTICULARY LOW FORWARD VOLTAGE
HIGHFREQUENCY OPERATION
HIGH REVERSE VOLTAGE CAPABILITY
K
A
NC
DPAK
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operationswhich require extremely
fast, soft and noise-free power diodes.
Due to their optimized switching performances
they also highly decrease power losses in any
associated switching IGBT or MOSFET in all
”freewheel mode” operations.
They are particularly suitable in motor control
circuitries, or in primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitablefor the secondaryof SMPS as high voltage
rectifier diodes.
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
VRSM
IF(RMS)
IFRM
IFSM
Tstg
Tj
Parameter
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
tp = 5 µs F = 5kHz square
Surge non repetitive forward current tp = 10ms sinusoidal
Storage temperature range
Maximum operating junction temperature
Value
1200
1200
6
35
25
- 65 to + 150
125
Unit
V
V
A
A
A
°C
°C
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 4A
1/8









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STTA312B Даташит, Описание, Даташиты
STTA312B
THERMAL AND POWER DATA
Symbol
Rth (j-c)
P1
Pmax
Parameter
Junction to case thermal resistance
Conduction power dissipation
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
Tests conditions
IF(AV) = 3A, δ = 0.5
Tc = 80°C
Tc = 76°C
Value
6.5
6.7
7.5
Unit
°C/W
W
W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VF ** Forward voltage drop
IR * Reverse leakage current
Vto
rd
Test pulses :
Threshold voltage
Dynamic resistance
* tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%
Tests conditions
IF = 3 A
IF = 3 A
Tj = 25°C
Tj = 125°C
VR = 0.8
X VRRM
Tj = 25°C
Tj = 125°C
Ip < 3.IAV Tj = 125°C
Min.
Typ.
1.15
150
Max.
1.8
1.7
20
400
1.15
185
Unit
V
µA
µA
V
m
To evaluatethe maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
trr
Parameter
IRM Maximum
recovery current
S factor Softness factor
Tj = 25°C
Tj = 125°C
Tj = 125°C
Test conditions
IF= 0.5A IR=1A Irr= 0.25A
IF= 1A dIF/dt= 50A/µs
VR= 30V
IF= 3A VR= 600V
dIF/dt = -16A/µs
dIF/dt = -50A/µs
VR= 600V IF= 3A
dIF/dt = -50A/µs
Min. Typ. Max. Unit
65 ns
115
3.6
6.0
1.2
A
-
TURN-ON SWITCHING
Symbol
tfr
VFP
Parameter
Forward recovery
time
Peak forward voltage
Test conditions
Tj = 25°C
IF=3A dIF/dt = 16A/µs
Measured at 1.1 x VFmax
Min. Typ. Max. Unit
900 ns
35 V
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STTA312B Даташит, Описание, Даташиты
Fig. 1: Conductionlosses versus average current.
P1(W)
8
7
6
5
4
3
2
1
0
0.0 0.5
δ = 0.1
δ = 0.2
IF(av) (A)
1.0 1.5 2.0
δ = 0.5
δ=1
2.5 3.0 3.5
STTA312B
Fig. 2: Forward voltage drop versus forward cur-
rent (maximum values).
IFM(A)
3E+1
1E+1
1E+0
Tj=125°C
1E-1
Tj=25°C
VFM(V)
1E-2
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Fig. 3: Relative variation of thermal impedance Fig. 4: Peak reverse recovery current versus dIF/dt
junction to case versus pulse duration.
(90% confidence).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
0.2
δ = 0.2
δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
T
δ=tp/T
1E-1
tp
1E+0
IRM(A)
14
VR=600V
12 Tj=125°C
10
IF=2*IF(av)
8
IF=IF(av)
6
4
2
dIF/dt(A/µs)
0
0 10 20 30 40 50 60 70 80 90 100
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
Fig. 6: Softness factor tb/ta versus dIF/dt (typical
values).
trr(ns)
600
500
VR=600V
Tj=125°C
400
300
IF=2*IF(av)
200
100
0
IF=IF(av)
dIF/dt(A/µs)
10 20 30 40 50 60 70 80 90 100
S factor
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
IF<2*IF(av)
VR=600V
Tj=125°C
dIF/dt(A/µs)
10 20 30 40 50 60 70 80 90 100
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