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PDF MRF18060BSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF18060BSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF18060B/D
The RF MOSFET Line
RF Power Field Effect Transistors MRF18060BR3
N - Channel Enhancement - Mode Lateral MOSFETs MRF18060BSR3
Designed for PCN and PCS base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications. Specified for GSM1930 - 1990 MHz.
• GSM Performance, Full Frequency Band (1930 - 1990 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts CW
Efficiency — 45% (Typ) @ 60 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF18060BLSR3
1.90 - 1.99 GHz, 60 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF18060BR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
CASE 465A - 06, STYLE 1
NI - 780S
MRF18060BSR3, MRF18060BLSR3
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
- 0.5, +15
180
1.03
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Symbol
RθJC
Value
0.97
Unit
°C/W
Class
2 (Minimum)
M3 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
For More Information On This Product,
Go to: www.freescale.com
1
1 page  
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
16
15
14 IDQ = 750 mA
13
500 mA
12
11 300 mA
10
100 mA
9
8
1
VDD = 26 Vdc
f = 1880 MHz
10
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus
Output Power
100
100
90
80 Pin = 5 W
70
60
2.5 W
50
40
30
20
10
0
18
1W
VDD = 26 Vdc
IDQ = 500 mA
20 22 24 26
VDD, SUPPLY VOLTAGE (VOLTS)
28
30
Figure 6. Output Power versus Supply Voltage
90
80 Pin = 6 W
70
3W
60
50
40
30
20
10
0
1800
1W
0.5 W
VDD = 26 Vdc
IDQ = 500 mA
1820 1840 1860 1880 1900
f, FREQUENCY (MHz)
Figure 7. Output Power versus Frequency
90
80
70
h
60
50 Pout
40
30
20 VDD = 26 Vdc
IDQ = 500 mA
10 f = 1880 MHz
0
0123 4 5 6
Pin, INPUT POWER (WATTS)
Figure 8. Output Power and Efficiency
versus Input Power
60
55
50
45
40
35
30
25
20
15
15.0
14.5
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
1700
Gps
IRL VDD = 26 Vdc
IDQ = 500 mA
1800 1900 2000
f, FREQUENCY (MHz)
Figure 9. Wideband Gain and IRL
(at Small Signal)
0
−2
−4
−6
−8
−10
−12
−14
−16
−18
−20
2100
MOTOROLA RF DEVICE DATA
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
For More Information On This Product,
Go to: www.freescale.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF18060BSR3.PDF ] | |
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