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PDF MRF18085BR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF18085BR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF18085B/D
The RF MOSFET Line
RF Power Field Effect Transistors MRF18085BR3
N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BLSR3
Designed for GSM and GSM EDGE base station applications with
frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
• GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990
MHz)
Power Gain - 12.5 dB (Typ) @ 85 Watts CW
Efficiency - 50% (Typ) @ 85 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency, and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
@ f = 1930 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
GSM/GSM EDGE
1.9 - 1.99 GHz, 85 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF18085BR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg
TJ
CASE 465A - 06, STYLE 1
NI - 780S
MRF18085BLSR3
Value
65
- 0.5, +15
273
1.56
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Symbol
RθJC
Value (1)
0.79
Unit
°C/W
Class
1 (Minimum)
M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MRF18085BR3 MRF18085BLSR3
For More Information On This Product,
Go to: www.freescale.com
1
1 page  
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
(Performed on a GSM EDGE Optimized Demo Board)
14
IDQ = 1000 mA
800 mA
13
600 mA
12
400 mA
11
VDD = 26 Vdc
f = 1.96 GHz
10
1 10 100
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
5
4.5
VDD = 26 Vdc
IDQ = 800 mA
4
3.5
Pout = 38 W Avg.
3
2.5 28 W Avg.
2
1.5 19 W Avg.
1
0.5
0
1.91 1.92
1.93 1.94 1.95 1.96 1.97
f, FREQUENCY (GHz)
1.98 1.99
Figure 6. Error Vector Magnitude versus
Frequency
2.0
14
13.5
13
12.5
12 32 V
11.5
28 V
11
10.5 24 V
10 VDD = 20 V
9.5
9
0 20 40 60 80 100
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain versus Output Power
6 14
5 Gps
4
13
12
3 11
2 10
1 EVM
9
0
34 36 38
40 42
44 46
8
48 50
Pout, OUTPUT POWER (dBm) AVG.
Figure 8. EVM and Gain versus Output Power
14
13.5
13
12.5
12
11.5
11
1.85
−5 16
60
30 W −10
−15
80 W 30 W
−20
−25
80 W
VDD = 26 Vdc
IDQ = 800 mA
1.90 1.95 2.00
f, FREQUENCY (GHz)
Figure 9. Power Gain and IRL
versus Frequency
−30
−35
2.05
15 50
14
Gps
13
40
30
12 20
h
11
10
1
VDD = 26 Vdc
IDQ = 800 mA
10
f = 1.96 GHz
0
10 100
Pout, OUTPUT POWER (WATTS)
Figure 10. Power Gain and Efficiency
versus Output Power
MOTOROLA RF DEVICE DATA
MRF18085BR3 MRF18085BLSR3
For More Information On This Product,
Go to: www.freescale.com
5
5 Page 
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
B
B
(FLANGE)
H
E
A
G
1
2X Q
bbb M T A M B M
2
D
bbb M T A M
A
(FLANGE)
3
K
BM
M (INSULATOR)
bbb M T A M
N (LID)
ccc M T A M
C
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
B M ccc M T A M B M
S (INSULATOR)
B M aaa M T A M B M
CASE 465 - 06
ISSUE F
NI - 780
MRF18085BR3
F
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
Q .118 .138
R 0.365 0.375
S 0.365 0.375
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
33.91 34.16
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
19.66 19.96
19.60 20.00
3.00 3.51
9.27 9.53
9.27 9.52
0.127 REF
0.254 REF
0.381 REF
4X U
(FLANGE)
B
4X Z
(LID)
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
B
(FLANGE)
2
D
bbb M T A M
2X K
BM
H
E
A
N (LID)
ccc M T A M B M
M (INSULATOR)
bbb M T A M B M
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
A
(FLANGE)
C
3
T
SEATING
PLANE
CASE 465A - 06
ISSUE F
NI - 780S
MRF18085BLSR3
F
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U −−− 0.040
Z −−− 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
−−− 1.02
−−− 0.76
0.127 REF
0.254 REF
0.381 REF
MOTOROLA RF DEVICE DATA
MRF18085BR3 MRF18085BLSR3
For More Information On This Product,
Go to: www.freescale.com
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF18085BR3.PDF ] | |
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