MRF187R3 Datasheet PDF - Motorola Semiconductors
| Part Number | MRF187R3 | |
| Description | RF POWER FIELD EFFECT TRANSISTORS | |
| Manufacturers | Motorola Semiconductors | |
| Logo |  |
|
|
There is a preview and MRF187R3 download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
Preview 1 page No Preview Available !
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1.0 GHz. The high gain and broadband performance of
these devices make them ideal for large–signal, common source amplifier
applications in 26 volt base station equipment.
• Guaranteed Performance @ 880 MHz, 26 Volts
Output Power — 85 Watts PEP
Power Gain — 12 dB
Efficiency — 30%
Intermodulation Distortion — –28 dBc
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, 880 MHz, 85 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
Reel.
Order this document
by MRF187/D
MRF187
MRF187R3
MRF187SR3
1.0 GHz, 85 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF187
CASE 465A–06, STYLE 1
NI–780S
MRF187SR3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC ≥ 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
65
65
±20
15
250
1.43
–65 to +200
200
Max
0.70
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF187 MRF187R3 MRF187SR3
1
|
| |
 
f = 865 MHz
895 MHz
f = 865 MHz
Zin
ZOL* 895 MHz
Zo = 10 Ω
VCC = 26 V, IDQ = 550 mA, Pout = 85 W PEP
f
MHz
Zin
Ω
ZOL*
Ω
865
1.04 + j1.51
1.13 – j0.091
880
1.03 + j1.39
1.20 – j0.176
895
1.03 + j1.29
1.28 – j0.242
Zin = Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
Note: ZOL* was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Figure 7. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF187 MRF187R3 MRF187SR3
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MRF187R3 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ MRF187R3.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| MRF187R3 | The function is RF POWER FIELD EFFECT TRANSISTORS. Motorola Semiconductors | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
MRF1
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||