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SKM75GB124D Datasheet Download - Semikron International

Номер произв SKM75GB124D
Описание Low Loss IGBT Modules
Производители Semikron International
логотип Semikron International логотип 


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SKM75GB124D Даташит, Описание, Даташиты
SKM 75GB124D
SEMITRANSTM 2
Low Loss IGBT Modules
SKM 75GB124D
Features
      
      
    
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    ) *  
 #  (
 + , (   -.# 
     '    
/-" / -  "  
 % $    
 #   01   
     21 
Typical Applications
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Absolute Maximum Ratings
Symbol Conditions
IGBT
6-7
-
-:
6!7
<  
6
 3 24 94 5-
3 0 
7:.  =  
.- 0  ?
Inverse diode
+  3 24 A1 5-
+: 3 0 
+ 3 01 B  ?B < 3 041 5-
 3 24 5-   $  (
Values
Units
0211
011 94
011
; 21
 >1 ??? @ 041 024
2411
6
.
.
6
5-
6
94 41
011
441
.
.
.
Characteristics
 3 24 5-   $  (
Symbol Conditions
min. typ. max. Units
IGBT
6!7 
-7
6-7 
-7
6-7  
-
-
-
#-7
:--F@77F
  

 ((
(
7 7((
6!7 3 6-7 - 3 2 .
6!7 3 1 6-7 3 6-7 < 3 24 024 5-
< 3 24 024 5-
6!7 3 04 6 < 3 24 024 5-
-  3 41 . 6!7 3 04 6  
 ($     
6!7 3 1 6-7 3 24 6 ( 3 0 &E
?   3 24 024 5-
6-- 3 )11 6 -  3 41 .
:! 3 :!(( 3 22 D < 3 024 5-
6!7 3 ; 04 6
>4 44 )4 6
10 1C .
00 00 024 024 6
21 2) 2> C2 D
20 2> 2>4 2A4 6
CC >C +
14 1) +
122 1C +
C1 &
194 0
D
)1 011 
44 011 
>21 411 
41 011 
A )
G
Inverse diode
6+ 3 67-
6 

::
I
7
+  3 41 .B 6!7 3 1 6B < 3 24 024 5-
< 3 24 024 5-
< 3 24 024 5-
+  3 41 .B < 3 024  5-
J 3 .JK
6!7 3 6
2 0A
24
6
00 02 6
22 D
CH .
9 K-
G
Thermal characteristics
:  <
:  </
:  
 !"
  /
  
129 LJM
1) LJM
114 LJM
Mechanical data
    N )
    4
$
C 4 
24 4 
0)1 
GB
1
14-06-2005 SEN
© by SEMIKRON







No Preview Available !

SKM75GB124D Даташит, Описание, Даташиты
SKM 75GB124D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
2
Fig. 6 Typ. gate charge characteristic
14-06-2005 SEN
© by SEMIKRON







No Preview Available !

SKM75GB124D Даташит, Описание, Даташиты
SKM 75GB124D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
3
Fig. 12 Typ. CAL diode peak reverse recovery current
14-06-2005 SEN
© by SEMIKRON








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