P55NF06 PDF даташит
Спецификация P55NF06 изготовлена «ST Microelectronics» и имеет функцию, называемую «STP55NF06». |
|
Детали детали
Номер произв | P55NF06 |
Описание | STP55NF06 |
Производители | ST Microelectronics |
логотип |
19 Pages
No Preview Available ! |
STB55NF06, STP55NF06, STP55NF06FP
N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in
D²PAK, TO-220 and TO-220FP packages
Datasheet — production data
Features
Order code
STB55NF06
STP55NF06
STP55NF06FP
VDSS RDS(on) max.
ID
60 V
< 0.018 Ω
50 A
50 A (1)
1. Refer to soa for the max allowable current value on
FP-type due to Rth value
■ 100% avalanche tested
■ Exceptional dv/dt capability
Applications
■ Switching application
Description
These Power MOSFETs have been developed
using STMicroelectronics’ unique STripFET
process, which is specifically designed to
minimize input capacitance and gate charge. This
renders the devices suitable for use as primary
switch in advanced high-efficiency isolated DC-
DC converters for telecom and computer
applications, and applications with low gate
charge driving requirements.
TAB
3
2
1
TO-220
TAB
3
1
D2PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$ OR 4!"
'
3
!-V
Table 1. Device summary
Order code
Marking
STB55NF06
B55NF06
STP55NF06
P55NF06
STP55NF06FP
P55NF06FP
Package
D²PAK
TO-220
TO-220
Packaging
Tape and reel
Tube
May 2012
This is information on a product in full production.
Doc ID 7544 Rev 11
1/19
www.st.com
19
No Preview Available ! |
Contents
Contents
STB55NF06, STP55NF06, STP55NF06FP
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 Doc ID 7544 Rev 11
No Preview Available ! |
STB55NF06, STP55NF06, STP55NF06FP
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220,
D2PAK
TO-220FP
VDS
VGS
ID
ID
IDM(2)
Ptot
EAS (3)
dv/dt (4)
Drain-source voltage
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
Single pulse avalanche energy
Peak diode recovery voltage slope
50
35
200
110
0.73
60
± 20
340
7
50(1)
35(1)
200(1)
30
0.20
VISO
Tstg
Tj
Insulation withstand voltage (DC)
Storage temperature
Max. operating junction temperature
2500
-55 to 175
1. Refer to soa for the max allowable current value on FP-type due to Rth value
2. Pulse width limited by safe operating area.
3. Starting Tj = 25 °C, VDD = 30 V, ID =25 A
4. ISD ≤50 A, di/dt ≤400 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Unit
V
V
A
A
A
W
W/°C
mJ
V/ns
V
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
D2PAK TO-220 TO-220FP
Unit
1.36
62.5
5
°C/W
°C/W
Doc ID 7544 Rev 11
3/19
Скачать PDF:
[ P55NF06.PDF Даташит ]
Номер в каталоге | Описание | Производители |
P55NF06 | STP55NF06 | ST Microelectronics |
P55NF06 | N-CHANNEL POWER MOSFET TRANSISTOR | Thinki Semiconductor |
P55NF06L | STP55NF06L | STMicroelectronics |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |