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PDF 03N70P Data sheet ( Hoja de datos )
| Número de pieza | 03N70P | |
| Descripción | AP03N70P | |
| Fabricantes | ADPOW | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 03N70P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP03N70P
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
D
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
G
S
Description
AP03N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.TO-220 type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
BVDSS 600/650/700V
RDS(ON)
3.6Ω
ID 3.3A
G
D
S
TO-220
The TO-220 package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-
AC converters and high current high speed switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
- /A/H
Rating
600/650/700
± 30
3.3
2.1
13.2
45
0.36
85
3.3
3.3
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
62
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200303032
1 page  
AP03N70P
16
14 I D =3.3A
V DS =480V
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
100
Coss
Crss
1
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 03N70P.PDF ] | |
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