|
|
Datasheet C30617 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C30617 | (C30616/37/17) Planar PIN InGaAs Photodiodes |  RCA | diode |
| 2 | C30617 | (C306xx) High Speed InGaAs PIN D A T A S H E E T
Lighting
Imaging
Telecom
InGaAs PIN Photodiodes
High-Speed InGaAs PIN C30616, C30637, C30617, C30618 InGaAs PIN Photodiodes
Description
These high-speed InGaAs photodiodes are designed for use in O E M f i b e r- o p t i c c o m m u n i c a t i o n s systems and high-speed re |  Perkin Elmer Optoelectronics | data |
| 3 | C30617 | (C306xx) High Speed InGaAs PIN Photodiodes Description
High-speed InGaAs photodiodes from PerkinElmer Optoelectronics are designed for use in OEM fiber optic communications systems and highspeed receiver applications including trunk line, LAN, fiber-in-the-loop and data communications. Ceramic submount packages are available for easy integra | Perkin Elmer Optoelectronics | diode |
C30 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C300 | MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE
intronies
MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE
FEATURES r 16 pin ceramic dip (C300 Series) r Minimum of external components required o Easily adjusts for yoke errors o Accuracy better than 0.590 Max (C312) o Bandwidth compatible with l0MHz systems r Both geometr  Intronice data | | |
| 2 | C3000 | NPN Transistor, 2SC3000 Ordering number:EN866C
Features
· FBET series. · High fT and small Cre.
NPN Epitaxial Planar Silicon Transistor
2SC3000
HF Amplifier Applications
Package Dimensions
unit:mm 2003A
[2SC3000]
JEDEC : TO-92 EIAJ : SC-43
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Coll  Sanyo data | | |
| 3 | C3011 | NPN Transistor, 2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3011
2SC3011
UHF~C Band Low Noise Amplifier Applications
Unit: mm
· High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), f = 1 GHz · High fT: fT = 6.5 GHz
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base v  Toshiba data | | |
| 4 | C3012 | NPN Transistor, 2SC3012 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3012
DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier.
PINNING
1 2 3 Base
PIN
DESCRIPTION
Collector;conne  ETC data | | |
| 5 | C301AC | UPC301AC NEC data | | |
| 6 | C3021 | NPN Transistor, 2SC3021 MITSUBISHI data | | |
| 7 | C3025 | NPN Transistor, 2SC3025 SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION ·With TO-3 package ·High breakdown voltage
APPLICATIONS ·High voltage power switching character
display horizontal deflection output
PINNING(see Fig.2)
PIN DESCRIPTION 1 Base 2 Emitter 3 Collector
Product Specifica  SavantIC data | |
| Esta página es del resultado de búsqueda del C30617. Si pulsa el resultado de búsqueda de C30617 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |