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даташит 3P6MH PDF ( Datasheet )

3P6MH Datasheet Download - NEC

Номер произв 3P6MH
Описание THYRISTORS
Производители NEC
логотип NEC логотип 



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3P6MH Даташит, Описание, Даташиты
DATA SHEET
THYRISTORS
3P4MH, 3P6MH
3 A MOLD SCR
The 3P4MH and 3P6MH are P-gate fully diffused mold
SCRs with an average on-current of 3 A. The repeat peak off-
voltages (and reverse voltages) are 400 V and 600 V.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
• Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Noncontact switches of consumer electronic euipments,
electric equipments, audio quipments, and light indutry
equipements
*TC test bench-mark
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Non-repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-voltage
Average on-state current
Effective on-state current
Surge on-state current
Fusing current
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
Storage temperature
Symbol
VRSM
VDSM
VRRM
VDRM
IT(AV)
IT(RMS)
ITSM
it2dt
dIT/dt
PGM
PG(AV)
IFGM
VRGM
Tj
Tstg
3P4MH
3P6MH
500 700
500 700
400 600
400 600
3 (Tc = 87°C, Single half-wave, θ = 180°)
4.7
65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)
20 (1 mst10 ms)
50
2 (f50 Hz, Duty10%)
0.2
1 (f50 Hz, Duty10%)
6
40 to +125
55 tp +150
Ratings
V
V
V
V
A
A
A
Unit
RGK = 1 k
RGK = 1 k
RGK = 1 k
RGK = 1 k
Refer to Figure 11.
Refer to Figure 2.
A2s
A/µs
W
W
A
V
°C
°C
Refer to Figure 3.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13533EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928







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3P6MH Даташит, Описание, Даташиты
3P4MH, 3P6MH
ELECTRICAL CHARACTERISTICS (Tj = 25°C, RGK = 1 k)
Parameter
Symbol
Conditions
Repeat peak reverse
current
Repeat peak off-current
Critical rate-of-rise of off-
state voltage
On-state voltage
Gate trigger current
Gate trigger voltage
Gate non-trigger voltage
Holding current
Commutating turn-off time
Thermal resistance
IRRM
IDRM
dV/dt
VRM = VRRM
Tj = 25°C
Tj = 125°C
VDM = VDRM
Tj = 25°C
Tj = 125°C
Tj = 125°C, VDM = 2 VDRM
3
VTM
IGT
VGT
VGD
IH
Tq
Rth(j-c)
Rth(j-a)
IT = 10 A
VDM = 6 V, RL = 100
VDM = 6 V, RL = 100
Tj = 125°C,
VDM
=
VDRM
2
VDM = 24 V, ITM = 10 A
Tj = 125°C,
IT = 3 A, diR/dt = 15 A/µs
VR25 V, VDM = 2 VDRM
3
dVD/dt = 1 V/µs
Junction-to-case DC
Junction-to-ambient DC
Specifications
MIN. TYP. MAX.
− − 100
− −2
− − 100
− −2
3
Unit
µA
mA
µA
mA
V/µs
Remarks
− − 1.6 V Refer to Figure 1.
− − 0.2 mA Refer to Figure 14.
− − 0.8 V
0.2 − − V
1 5 mA
80 µs
− − 8 °C/W Refer to Figure 13.
− − 75
TYPICAL CHARACTERISTICS (Ta = 25°C)
2 Data Sheet D13533EJ3V0DS







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3P6MH Даташит, Описание, Даташиты
3P4MH, 3P6MH
Data Sheet D13533EJ3V0DS
3










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