3P6MH PDF даташит
Спецификация 3P6MH изготовлена «NEC» и имеет функцию, называемую «THYRISTORS». |
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Детали детали
Номер произв | 3P6MH |
Описание | THYRISTORS |
Производители | NEC |
логотип |
6 Pages
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DATA SHEET
THYRISTORS
3P4MH, 3P6MH
3 A MOLD SCR
The 3P4MH and 3P6MH are P-gate fully diffused mold
SCRs with an average on-current of 3 A. The repeat peak off-
voltages (and reverse voltages) are 400 V and 600 V.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
• Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Noncontact switches of consumer electronic euipments,
electric equipments, audio quipments, and light indutry
equipements
*TC test bench-mark
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Non-repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-voltage
Average on-state current
Effective on-state current
Surge on-state current
Fusing current
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
Storage temperature
Symbol
VRSM
VDSM
VRRM
VDRM
IT(AV)
IT(RMS)
ITSM
∫ it2dt
dIT/dt
PGM
PG(AV)
IFGM
VRGM
Tj
Tstg
3P4MH
3P6MH
500 700
500 700
400 600
400 600
3 (Tc = 87°C, Single half-wave, θ = 180°)
4.7
65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)
20 (1 ms≤t≤10 ms)
50
2 (f≥50 Hz, Duty≤10%)
0.2
1 (f≥50 Hz, Duty≤10%)
6
−40 to +125
−55 tp +150
Ratings
V
V
V
V
A
A
A
Unit
RGK = 1 kΩ
RGK = 1 kΩ
RGK = 1 kΩ
RGK = 1 kΩ
Refer to Figure 11.
−
Refer to Figure 2.
A2s
A/µs
W
W
A
V
°C
°C
−
−
Refer to Figure 3.
−
−
−
−
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13533EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
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3P4MH, 3P6MH
ELECTRICAL CHARACTERISTICS (Tj = 25°C, RGK = 1 kΩ)
Parameter
Symbol
Conditions
Repeat peak reverse
current
Repeat peak off-current
Critical rate-of-rise of off-
state voltage
On-state voltage
Gate trigger current
Gate trigger voltage
Gate non-trigger voltage
Holding current
Commutating turn-off time
Thermal resistance
IRRM
IDRM
dV/dt
VRM = VRRM
Tj = 25°C
Tj = 125°C
VDM = VDRM
Tj = 25°C
Tj = 125°C
Tj = 125°C, VDM = 2 VDRM
3
VTM
IGT
VGT
VGD
IH
Tq
Rth(j-c)
Rth(j-a)
IT = 10 A
VDM = 6 V, RL = 100 Ω
VDM = 6 V, RL = 100 Ω
Tj = 125°C,
VDM
=
VDRM
2
VDM = 24 V, ITM = 10 A
Tj = 125°C,
IT = 3 A, diR/dt = 15 A/µs
VR≥25 V, VDM = 2 VDRM
3
dVD/dt = 1 V/µs
Junction-to-case DC
Junction-to-ambient DC
Specifications
MIN. TYP. MAX.
− − 100
− −2
− − 100
− −2
− 3−
Unit
µA
mA
µA
mA
V/µs
Remarks
−
−
−
−
−
− − 1.6 V Refer to Figure 1.
− − 0.2 mA Refer to Figure 14.
− − 0.8 V
0.2 − − V
−
− 1 5 mA
− 80 − µs
−
−
− − 8 °C/W Refer to Figure 13.
− − 75
TYPICAL CHARACTERISTICS (Ta = 25°C)
2 Data Sheet D13533EJ3V0DS
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3P4MH, 3P6MH
Data Sheet D13533EJ3V0DS
3
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