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PDF MRF6S9060 Data sheet ( Hoja de datos )
| Número de pieza | MRF6S9060 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
•
Typical Single - Carrier N
ITDrQaff=ic4C50odmeAs ,8PTohutro=u1g4h
-WCaDttMs AAvPge.,rfIoSrm- 9a5ncCeD@MA88(P0ilMotH, Sz,yVncD,DP=ag2i8ngV,olts,
13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — - 47.6 dBc @ 30 kHz Bandwidth
GSM EDGE Application
• TPyopuPtico=awl2eG1rSWGMaaitEntsD—AGv2Eg0.P, dFeBurflol rFmreaqnuceen: cVyDDBa=n2d8(9V2o1lt-s9, 6ID0QM=H5z0)0 mA,
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
•
Typical GSM Performance:
Full Frequency Band (921 -
9V6D0DM=H2z8)
Volts,
IDQ
=
500
mA,
Pout
=
60
Watts,
Power Gain — 20 dB
Drain Efficiency — 63%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Document Number: MRF6S9060
Rev. 1, 6/2005
MRF6S9060NR1
MRF6S9060NBR1
MRF6S9060MR1
MRF6S9060MBR1
880 MHz, 14 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265- 08, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S9060NR1(MR1)
CASE 1337 - 03, STYLE 1
TO - 272 - 2
PLASTIC
MRF6S9060NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
- 0.5, +68
- 0.5, + 12
227
1.3
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
1
1 page  
C7 R2
VGG R1
C9
C1
B1
R3
C8
L1
C2
C3
C6
C5
C4
C19
B2
VDD
C16 C17
R4
C15 C18
L2
C11
C10 C12
C13
C14
TO − 270/272
Surface /
Bolt down
Figure 2. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
5
5 Page 
NOTES
RF Device Data
Freescale Semiconductor
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MRF6S9060.PDF ] | |
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