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Номер произв MRF6S9045
Описание RF Power Field Effect Transistors
Производители Freescale Semiconductor
логотип Freescale Semiconductor логотип 



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MRF6S9045 Даташит, Описание, Даташиты
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
Typical Single - Carrier N
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-WCaDttMs AAvPge.,rfIoSrm- 9a5ncCeD@MA88(P0ilMotH, Sz,yVncD,DP=ag2i8ngV,olts,
13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.7 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — - 47 dBc @ 30 kHz Bandwidth
GSM EDGE Application
TPyopuPtico=awl1eG6rSWGMaaitEntsD—AGv2Eg0.P, dFeBurflol rFmreaqnuceen: cVyDDBa=n2d8(9V2o1lt-s9, 6ID0QM=H3z5)0 mA,
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
Typical GSM Performance:
Full Frequency Band (921 -
9V6D0DM=H2z8)
Volts,
IDQ
=
350
mA,
Pout
=
45
Watts,
Power Gain — 20 dB
Drain Efficiency — 68%
Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW
Output Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
Integrated ESD Protection
N Suffix Indicates Lead - Free Terminations
200°C Capable Plastic Package
TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Document Number: MRF6S9045
Rev. 1, 6/2005
MRF6S9045NR1
MRF6S9045NBR1
MRF6S9045MR1
MRF6S9045MBR1
880 MHz, 10 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265- 08, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S9045NR1(MR1)
CASE 1337 - 03, STYLE 1
TO - 272 - 2
PLASTIC
MRF6S9045NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
- 0.5, +68
- 0.5, + 12
175
1.0
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
1









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MRF6S9045 Даташит, Описание, Даташиты
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
°C/W
1.0
1.1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µA)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 350 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
IDSS
IDSS
IGSS
VGS(th)
VGS(Q)
VDS(on)
gfs
1
2
2
2.9
0.22
4
10 µAdc
1 µAdc
1 µAdc
3 Vdc
4 Vdc
0.3 Vdc
—S
Dynamic Characteristics
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss — 77 — pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
27
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 0.78 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
Gps 21 22.7 25 dB
Drain Efficiency
ηD 30.5 32 — %
Adjacent Channel Power Ratio
ACPR
- 47 - 45 dBc
Input Return Loss
IRL —
dB
MRF6S9045NR1(MR1)
- 20 - 9
MRF6S9045NBR1(MBR1)
- 20 - 7
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
2
RF Device Data
Freescale Semiconductor









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MRF6S9045 Даташит, Описание, Даташиты
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system)
VDD = 28 Vdc, IDQ = 350 mA, Pout = 16 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
Gps — 20 —
Drain Efficiency
ηD — 46 —
Error Vector Magnitude
EVM
1.5
Spectral Regrowth at 400 kHz Offset
SR1 — - 62 —
Spectral Regrowth at 600 kHz Offset
SR2 — - 78 —
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 28 Vdc,
IDQ = 350 mA, Pout = 45 W, f = 921 - 960 MHz
Power Gain
Gps — 20 —
Drain Efficiency
ηD — 68 —
Input Return Loss
IRL — - 12 —
Pout @ 1 dB Compression Point
(f = 940 MHz)
P1dB
52
Unit
dB
%
%
dBc
dBc
dB
%
dB
W
RF Device Data
Freescale Semiconductor
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
3










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