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PDF 93AA66B Data sheet ( Hoja de datos )

Número de pieza 93AA66B
Descripción (93AA66A - 93AA66C) 4K Microwire Compatible Serial EEPROM
Fabricantes Microchip Technology 
Logotipo Microchip Technology Logotipo



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93AA66A/B/C, 93LC66A/B/C,
93C66A/B/C
4K Microwire Compatible Serial EEPROM
Device Selection Table
Part Number VCC Range
93AA66A
93AA66B
93LC66A
93LC66B
93C66A
93C66B
93AA66C
93LC66C
93C66C
1.8-5.5
1.8-5-5
2.5-5.5
2.5-5.5
4.5-5.5
4.5-5.5
1.8-5.5
2.5-5.5
4.5-5.5
ORG Pin
No
No
No
No
No
No
Yes
Yes
Yes
Word Size
8-bit
16-bit
8-bit
16-bit
8-bit
16-bit
8 or 16-bit
8 or 16-bit
8 or 16-bit
Temp Ranges
I
I
I, E
I, E
I, E
I, E
I
I, E
I, E
Packages
P, SN, ST, MS, OT, MC
P, SN, ST, MS, OT, MC
P, SN, ST, MS, OT, MC
P, SN, ST, MS, OT, MC
P, SN, ST, MS, OT, MC
P, SN, ST, MS, OT, MC
P, SN, ST, MS, MC
P, SN, ST, MS, MC
P, SN, ST, MS, MC
Features:
• Low-power CMOS technology
• ORG pin to select word size for ‘66C’ version
• 512 x 8-bit organization ‘A’ ver. devices (no ORG)
• 256 x 16-bit organization ‘B’ ver. devices (no
ORG)
• Self-timed erase/write cycles (including
auto-erase)
• Automatic ERAL before WRAL
• Power-on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device Status signal (Ready/Busy)
• Sequential read function
• 1,000,000 E/W cycles
• Data retention > 200 years
• Temperature ranges supported:
- Industrial (I)
- Automotive (E)
-40°C to +85°C
-40°C to +125°C
Pin Function Table
Name
Function
CS Chip Select
CLK Serial Data Clock
DI Serial Data Input
DO Serial Data Output
VSS Ground
NC
ORG
No internal connection
Memory Configuration
VCC Power Supply
Description:
The Microchip Technology Inc. 93XX66A/B/C devices
are 4K bit low-voltage serial Electrically Erasable
PROMs (EEPROM). Word-selectable devices such as
the 93AA66C, 93LC66C or 93C66C are dependent
upon external logic levels driving the ORG pin to set
word size. For dedicated 8-bit communication, the
93XX66A devices are available, while the 93XX66B
devices provide dedicated 16-bit communication.
Advanced CMOS technology makes these devices
ideal for low-power, nonvolatile memory applications.
The entire 93XX Series is available in standard
packages including 8-lead PDIP and SOIC, and
advanced packaging including 8-lead MSOP, 6-lead
SOT-23, 8-lead 2x3 DFN and 8-lead TSSOP. Pb-free
(Pure Matte Sn) finish is available.
© 2005 Microchip Technology Inc.
DS21795C-page 1

1 page




93AA66B pdf
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
FIGURE 1-1:
SYNCHRONOUS DATA TIMING
CS VIH
VIL TCSS TCKH
TCKL
VIH
CLK
TCSH
VIL
TDIS
VIH
DI
TDIH
VIL
DO VOH
TPD
TPD
TCZ
(Read) VOL
DO VOH
(Program) VOL
TSV
Status Valid
TCZ
Note: TSV is relative to CS.
TABLE 1-3: INSTRUCTION SET FOR X 16 ORGANIZATION (93XX66B OR 93XX66C WITH ORG = 1)
Instruction SB Opcode
Address
Data In Data Out Req. CLK Cycles
ERASE
ERAL
EWDS
EWEN
READ
WRITE
WRAL
1 11 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY)
1 00 1 0 X X X X X X — (RDY/BSY)
1 00 0 0 X X X X X X
High-Z
1 00 1 1 X X X X X X
High-Z
1
10 A7 A6 A5 A4 A3 A2 A1 A0
D15 – D0
1 01 A7 A6 A5 A4 A3 A2 A1 A0 D15 – D0 (RDY/BSY)
1 00 0 1 X X X X X X D15 – D0 (RDY/BSY)
11
11
11
11
27
27
27
TABLE 1-4: INSTRUCTION SET FOR X 8 ORGANIZATION (93XX66A OR 93XX66C WITH ORG = 0)
Instruction SB Opcode
Address
Data In Data Out
Req. CLK
Cycles
ERASE
ERAL
EWDS
EWEN
READ
WRITE
WRAL
1
11 A8 A7 A6 A5 A4 A3 A2 A1 A0 —
(RDY/BSY)
1 00 1 0 X X X X X X X — (RDY/BSY)
1
00 0 0 X X X X X X X
High-Z
1
00 1 1 X X X X X X X
High-Z
1 10 A8 A7 A6 A5 A4 A3 A2 A1 A0 —
D7 – D0
1 01 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 – D0 (RDY/BSY)
1 00 0 1 X X X X X X X D7 – D0 (RDY/BSY)
12
12
12
12
20
20
20
© 2005 Microchip Technology Inc.
DS21795C-page 5

5 Page





93AA66B arduino
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.9 Write All (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
For 93AA66A/B/C and 93LC66A/B/C devices, after the
last data bit is clocked into DI, the falling edge of CS
initiates the self-timed auto-erase and programming
cycle. For 93C66A/B/C devices, the self-timed auto-
erase and programming cycle is initiated by the rising
edge of CLK on the last data bit. Clocking of the CLK
pin is not necessary after the device has entered the
WRAL cycle. The WRAL command does include an
automatic ERAL cycle for the device. Therefore, the
WRAL instruction does not require an ERAL instruction,
but the chip must be in the EWEN status.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL).
Note: Issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
VCC must be 4.5V for proper operation of WRAL.
FIGURE 2-10:
CS
WRAL TIMING FOR 93AA AND 93LC DEVICES
TCSL
CLK
DI 1 0 0 0 1 x ••• x Dx ••• D0
DO High-Z
VCC must be 4.5V for proper operation of WRAL.
TSV TCZ
Busy
TWL
Ready
High-Z
FIGURE 2-11:
CS
WRAL TIMING FOR 93C DEVICES
TCSL
CLK
DI 1 0 0 0 1 x ••• x Dx ••• D0
TSV TCZ
DO High-Z
Busy Ready
High-Z
TWL
© 2005 Microchip Technology Inc.
DS21795C-page 11

11 Page







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