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P12NB30FP PDF даташит

Спецификация P12NB30FP изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «STP12NB30».

Детали детали

Номер произв P12NB30FP
Описание STP12NB30
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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P12NB30FP Даташит, Описание, Даташиты
www.DataSheet.co.kr
STP12NB30
STP12NB30FP
N - CHANNEL ENHANCEMENT MODE
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
STP3NB60
300 V
STP12NB30FP 300 V
< 0.40
< 0.40
12A
6.5 A
s TYPICAL RDS(on) = 0.34
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
PRELIMINARY DATA
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY(UPS)
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM ( )
Ptot
dv/dt(1)
VISO
Tstg
Tj
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
January 1998
Value
ST P12NB30 ST P12NB30FP
300
300
± 30
12 6.5
7.5 4
48 48
125 35
1 0.28
5.5 5.5
2000
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
V
oC
oC
1/6
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P12NB30FP Даташит, Описание, Даташиты
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STP12NB30/FP
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1
TO220-F P
3.57
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
12
250
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
300
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 6 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
3
Typ .
4
Max.
5
Unit
V
0.34 0.4
12 A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 6 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
3
Typ .
Max.
Unit
S
1000
200
25
1400
270
35
pF
pF
pF
2/6
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P12NB30FP Даташит, Описание, Даташиты
www.DataSheet.co.kr
STP12NB30/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Test Conditions
VDD = 150 V ID = 6 A
RG = 4.7
VGS = 10 V
Qg Total Gate Charge
VDD =240 V ID =12A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 240 V ID =12 A
RG = 4.7 VGS = 10 V
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 12 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD = 12 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
Charge
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ .
20
10
Max.
28
14
Unit
ns
ns
29 40 nC
11 nC
12 nC
Min.
Typ .
10
10
20
Max.
14
14
28
Unit
ns
ns
ns
Min.
Typ .
Max.
12
48
Unit
A
A
1.5
250
V
ns
2 µC
16 A
3/6
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P12NB30FPSTP12NB30ST Microelectronics
ST Microelectronics

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