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Номер произв	SD1530-7
Описание	NPN SILICON RF POWER TRANSISTOR
Производители	Advanced Semiconductor
логотип
1Page No Preview Available ! ASI SD1530-7 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1530-7 is a Common Base Device Designed for DME, IFF and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Broad Band Performance MAXIMUM RATINGS IC 2.5 A VCES PDISS TJ T STG θ JC 55 V 125 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 1.4 OC/W PACKAGE STYLE 250 2L FLG (A) 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCES IC = 75 mA BVEBO IE = 25 mA hFE VCE = 5.0 V IC = 300 mA MINIMUM TYPICAL MAXIMUM 55 4.0 10 UNITS V V --- PG VCC = 50 V Pout = 25 W fo = 960 to 1215 MHz 8.5 η C PULSE WIDTH = 10 µS DUTY CYCLE = 1.0% 10 45 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1
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