MRF653 PDF даташит
Спецификация MRF653 изготовлена «Motorola Semiconductors» и имеет функцию, называемую «RF POWER TRANSISTOR NPN SILICON». |
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Детали детали
Номер произв | MRF653 |
Описание | RF POWER TRANSISTOR NPN SILICON |
Производители | Motorola Semiconductors |
логотип |
6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF653/D
The RF Line
NPN Silicon
RF Power Transistor
MRF653
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
• Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 10 W
Gain = 8.0 dB (Typ)
Efficiency = 65% (Typ)
• Gold Metallized, Emitter Ballasted for Long Life and Reliability
• Capable of 20:1 VSWR Load Mismatch at 16 V Supply Voltage
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
10 W, 512 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
16.5
38
4.0
2.75
44
0.25
Vdc
Vdc
Vdc
Adc
Watts
W/°C
CASE 244–04, STYLE 1
Storage Temperature Range
Operating Junction Temperature
Tstg – 65 to +150
TJ 200
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0)
V(BR)CES
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0)
ICES
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 10 W, f = 512 MHz)
Gpe
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 10 W, f = 512 MHz)
ηc
Load Mismatch Stress
(VCC = 16 Vdc, f = 512 MHz, Pin (1) = 2.6 W,
VSWR = 20:1, All Phase Angles)
ψ
4.0 °C/W
Min Typ Max Unit
16.5 —
38 —
4.0 —
——
— Vdc
— Vdc
— Vdc
5.0 mAdc
20 — 120 —
— 22 28 pF
7.0 8.0 — dB
55 65 — %
No Degradation in Output Power
NOTE:
1. Pin = 2.0 dB over the typical input power required for 10 W output power @ 12.5 Vdc.
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF653
1
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JP1 L1 B
+
C7 C8 C9
L2 L3
SOCKET
B L4
C10 C11
+
C12
+
VCC
–
Z1
C1
C2
Z2
C3
D.U.T.
C4
Z3 Z4 Z5
C6
C5
C1, C5 — 1.0 – 20 pF, Johanson
C2, C6 — 330 pF, 100 Mil ATC
C3, C4 — 36 pF, Mini–Unelco
C7, C12 — 10 µF, 35 V, Tantalum
C8, C11 — 0.1 µF, Ceramic
C9, C10 — 91 pF, Mini–Unelco
L1, L4 — 4–1/2 Turns, #18 AWG, 0.16″ ID
L2, L3 — 2 Turns, #18 AWG, 0.16″ ID
B — Ferrite Bead, Ferroxcube 56–590–65–3B
Z1 — 51 x 630 mils
Z2 — 162 x 1300 mils
Z3 — 210 x 1350 mils
Z4 — 210 x 280 mils
Z5 — 51 x 300 mils
Board Material — 0.032″ epoxy glass G10, 1 oz., copper clad,
Board Material — double sided, εr = 5
JP1 — Jumper, #14 AWG w/Banana Plugs
Figure 1. Broadband Test Circuit Schematic
MRF653
2
MOTOROLA RF DEVICE DATA
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16 16
440 MHz
14 14
12 512 12
10 470 10
Pin = 2.4 W
1.6 W
88
6 6 0.8 W
44
VCC = 12.5 Vdc
VCC = 12.5 Vdc
22
00
0 0.5 1 1.5 2 2.5 3 3.5 430 440 450 460 470 480 490 500 510 520 530
Pin, INPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
16
14
12
fo = 512 MHz
10
8
Pin = 2.4 W
1.6 W
6
0.8 W
4
2
0
6 7 8 9 10 11 12 13 14 15 16
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
10
8 Gpe
70%
6 ηc
60%
50%
4
Pout = 10 W
40%
VCC = 12.5 Vdc
2
VSWR
0
440 450 460 470 480 490 500
f, FREQUENCY (MHz)
1.3:1
1.2:1
1.1:1
510 520
Figure 5. Typical Broadband Circuit Performance
MOTOROLA RF DEVICE DATA
MRF653
3
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