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STP80N05-09 PDF даташит

Спецификация STP80N05-09 изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR».

Детали детали

Номер произв STP80N05-09
Описание N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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STP80N05-09 Даташит, Описание, Даташиты
STP80N05-09
N - CHANNEL ENHANCEMENT MODE
”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
TYPE
ST P8 0N05 -09
VDS S
50 V
RDS(o n)
< 0.009
ID
80 A
s ULTRA HIGH DENSITY TECHNOLOGY
s TYPICAL RDS(on) = 7 m
s AVALANCHE RUGGED TECHNOLOGY
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
APPLICATIONS
s SYNCROUNOUS RECTIFIERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-DC & DC-AC CONVERTER ABSOLUTE
MAXIMUM RATINGS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym bol
P ar a mete r
VDS Drain-source Vo ltage (VGS = 0)
VDGR Drain- gate Vol tage (RGS = 20 k)
VGS Gate-s ource Vol tage
ID Drain Current (conti nuous) at Tc = 25 oC
ID Drain Current (conti nuous) at Tc = 100 oC
IDM() Drain Current (pul sed)
Ptot Total Dis sipation at Tc = 25 oC
Derating Fac tor
dV/dt(1) Peak Diode Recov ery vo ltage slo pe
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
March 1997
Value
Unit
50 V
50 V
± 20
V
80 A
60 A
320 A
150 W
1 W/oC
5 V/ns
-65 to 175
oC
175 oC
(1) ISD 60 A, di/dt 200 A/ms, VDD V(BR)DSS, TJ TJMAX
1/9









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STP80N05-09 Даташит, Описание, Даташиты
STP80N05-09
THERMAL DATA
Rt hj-case
Rth j-amb
R thc-sin k
Tl
Thermal Resist ance Junc tion-case
Thermal Resist ance Junc tion-ambi ent
Thermal Resist ance Case -sink
Max imum Lead Temperature For Sol dering Purpose
Ma x
Max
Typ
1
62.5
0.5
3 00
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
P ar am eter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limit ed by Tj max , δ < 1%)
Sin gle Pul se Aval anc he Energy
(starti ng Tj = 25 oC, ID = IAR, VDD = 25 V)
Max Value
60
6 00
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDS S
IGSS
P ar amet er
Test Conditions
Drain-so urce
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rati ng
Drain Current (VGS = 0) VDS = Max Rati ng
Tc = 125 oC
Gate-body Leak age
Current (VDS = 0)
VGS = ± 20 V
Min.
50
Typ.
Max. Unit
V
1
10
± 100
µA
µA
nA
ON ()
Symbol
VGS( th)
RDS( on)
ID(on)
P ar amet er
Test Conditions
Gate Threshold Vo ltage VDS = VGS ID = 250 µA
Static Drai n-s ource On VGS = 10V ID = 40 A
Res i st an ce
On State Drai n Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
Typ.
3
0 . 00 7
M ax .
4
0.009
Unit
V
80 A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
P ar amet er
For wa rd
Tra ns c on du ct an c e
Input Capac itance
Output Capacitance
Reverse Trans fer
Cap ac i ta nc e
Test Conditions
VDS > ID(on) x RDS(on)max ID = 40 A
Min.
Typ.
25
M ax .
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
5 90 0
900
230
pF
pF
pF
2/9









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STP80N05-09 Даташит, Описание, Даташиты
STP80N05-09
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/ dt)on
Qg
Qgs
Qgd
P ar amet er
Turn-on Time
Rise Time
Turn-on Current Slope
Total Ga te Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V
ID = 40 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 3)
VDD = 48 V
ID = 80 A
RG =5 0
VGS = 10 V
(see test circuit, figure 5)
VDD = 40 V ID = 80 A VGS = 10 V
Min.
Typ.
32
160
240
230
30
60
M ax .
42
200
280
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbol
tr(Vof f)
tf
tc
P ar amet er
Off-volt age Rise Time
Fal l Time
Cross-over Time
Test Conditions
VDD = 48 V
ID = 40 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
35
175
240
M ax .
46
230
300
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
P ar amet er
Test Conditions
ISD
ISD M ()
Source-drain Current
Source-drain Current
(pu l se d)
VSD () Forward On Voltage ISD = 80 A VGS = 0
trr Reverse Recovery
Tim e
Qrr Reverse Recovery
Cha rge
ISD = 80 A
di/dt = 100 A/µs
VR = 30 V
Tj = 150 oC
(see test circuit, figure 5)
IRRM Reverse Recovery
C ur rent
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
() Pulse width limited by safe operating area
Min.
Typ.
125
0. 6
10
M ax .
80
320
1 .5
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/9










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