MPS8098 PDF даташит
Спецификация MPS8098 изготовлена «NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistor». |
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Детали детали
Номер произв | MPS8098 |
Описание | NPN general purpose transistor |
Производители | NXP Semiconductors |
логотип |
8 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
MPS8098
NPN general purpose transistor
Product specification
File under Discrete Semiconductors, SC04
1997 May 26
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Product specification
MPS8098
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a plastic TO-92; SOT54 package.
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
handbook, halfpage1
2
3
2
MAM279
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
ICM
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
IC = 1 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V; f = 100 MHz
MIN.
−
−
−
−
100
150
MAX.
60
60
200
500
300
−
UNIT
V
V
mA
mW
MHz
1997 May 26
2
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Product specification
MPS8098
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
60
60
6
100
200
200
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBE
Cc
Ce
fT
collector cut-off current
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 150 °C
emitter cut-off current
IC = 0; VEB = 6 V
DC current gain
VCE = 5 V
IC = 1 mA
IC = 10 mA
IC = 100 mA
collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; note 1
base-emitter voltage
IC = 1 mA; VCE = 5 V; note 1
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz;
note 1
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MIN.
−
−
−
100
100
75
−
500
−
−
100
MAX.
100
10
100
UNIT
nA
µA
nA
300
−
−
400 mV
700 mV
6 pF
25 pF
− MHz
1997 May 26
3
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