|
|
Número de pieza | IRG4BC20UD-S | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | IRF | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRG4BC20UD-S (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! PD- 94077
IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating frequencies
8-40 kHz in hard switching, >200kHz in resonant
mode
• Generation 4 IGBT design provides tighter para-
meter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard D2Pak package
G
E
N-channel
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
Benefits
• Generation 4 IGBTs offers highest efficiencies
available
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
D2Pak
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
13
6.5
52
52
7.0
52
± 20
60
24
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.5
–––
1.44
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
1
1/12/01
1 page 1000
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SH OR TE D
C res = C gc
800 C oes = C ce + C gc
C ie s
600
Coes
400
C re s
200
0A
1 10 100
VCE, Collector-to-Em itter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC20UD-S
20
VCE = 400V
IC = 6.5A
16
12
8
4
0A
0 5 10 15 20 25 30
Qg , Total G ate C harge (nC )
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.32
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 6.5A
0.31
0.30
0.29
0
10 20 30 40 50
R G , G a te R e sista n ce ( Ω)
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10
RG = 50 Ω
V GE = 15V
V CC = 480V
IC = 1 3 A
1
IC = 6.5A
IC = 3.3A
0.1
-60 -40 -20 0
A
20 40 60 80 100 120 140 160
TJ , J u n ctio n T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page IRG4BC20UD-S
D2Pak Tape & Reel Information
TRR
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.16 1 )
3 .9 0 (.15 3 )
F E ED D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
TRL
10.90 (.42 9)
10.70 (.42 1)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.0 69 )
1.25 (.0 49 )
1 6.10 (.6 3 4)
1 5.90 (.6 2 6)
0.3 68 (.01 45 )
0.3 42 (.01 35 )
2 4.30 (.9 57 )
2 3.90 (.9 41 )
4.72 (.1 36 )
4.52 (.1 78 )
F E E D D IR E C T IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
33 0.00
(14.173)
MAX.
60.00 (2.36 2)
MIN .
NOTES :
1. C O MF OR MS TO EIA-418.
2. C O NTR O LLIN G DIM EN SIO N: M ILLIM ET ER.
3. D IM ENSIO N M EAS UR ED @ HU B.
4. IN CLU D ES F LAN G E D ISTO RT IO N @ O UT ER ED GE.
26.40 (1.0 39)
24.40 (.96 1)
3
30.40 (1.197)
MAX.
4
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-
perature (Figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (Figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/01
www.irf.com
11
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet IRG4BC20UD-S.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRG4BC20UD-S | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
IRG4BC20UD-SPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |