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PDF MRF10150 Data sheet ( Hoja de datos )
| Número de pieza | MRF10150 | |
| Descripción | MICROWAVE POWER TRANSISTORS | |
| Fabricantes | Tyco | |
| Logotipo |  |
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SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistor
. . . designed for 1025–1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
• Guaranteed Performance @ 1090 MHz
Output Power = 150 Watts Peak
Gain = 9.5 dB Min, 10.0 dB (Typ)
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input and Output Matching
• Characterized with 10 µs, 10% Duty Cycle Pulses
• Recommended Driver for a Pair of MRF10500 Transistors
Order this document
by MRF10150/D
MRF10150
150 W (PEAK)
1025–1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 376B–02, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
VCES
65
Vdc
VCBO
65
Vdc
VEBO
3.5
Vdc
IC 14 Adc
PD 700 Watts
4.0 W/°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Tstg –65 to +200
TJ 200
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
RθJC
0.25
°C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value
measured @ 10 µs, 10%.)
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MRF10150.PDF ] | |
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