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STD2NA60 PDF даташит

Спецификация STD2NA60 изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «N-CHANNEL MOSFET».

Детали детали

Номер произв STD2NA60
Описание N-CHANNEL MOSFET
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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STD2NA60 Даташит, Описание, Даташиты
STD2NA60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STD2NA60
VDSS
600 V
R DS( on)
<4
ID
2.3 A
s TYPICAL RDS(on) = 3.3
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
s HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s MOTOR CONTROL, AUDIO AMPLIFIERS
s INDUSTRIAL ACTUATORS
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
s PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
ID M()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1996
Value
600
600
± 30
2.3
1. 45
9.2
50
0.4
-65 to 150
150
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/10









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STD2NA60 Даташит, Описание, Даташиты
STD2NA60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max 2.5 oC/W
Rthj-amb Thermal Resistance Junction-ambient
Max 100 oC/W
Rthj-amb Thermal Resistance Case-sink
Typ 1.5 oC/W
Tl Maximum Lead Temperature For Soldering Purpose
275 oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
2.3
26
1
1.4
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 30 V
Min.
600
Typ.
Max.
Unit
V
25
250
± 100
µA
µA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1.5 A
R esist anc e
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2. 25
Typ.
3
3.3
Max.
3. 75
4
Unit
V
2.3 A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 1. 5 A
Min.
1
Typ.
2
Max.
Unit
S
VDS = 25 V f = 1 MHz VG S = 0
380 500
57 75
17 23
pF
pF
pF
2/10









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STD2NA60 Даташит, Описание, Даташиты
STD2NA60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
(di/ d t) o n
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 300 V ID = 1.5 A
RG = 18
VGS = 10 V
(see test circuit, figure 3)
VDD = 400 V ID = 3 A
RG = 18
VGS = 10 V
(see test circuit, figure 5)
VDD = 480 V ID = 3 A VGS = 10 V
Min.
Typ.
14
25
300
22
6
9
Max.
20
35
30
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 3 A
RG = 18 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
13
24
12
Max.
18
34
17
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
IS D
I SDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 2.3 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 3 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
2.3
9.2
Unit
A
A
1.5
460
V
ns
5.6 µC
24 A
Safe Operating Area
Thermal Impedance
3/10










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STD2NA60N-CHANNEL MOSFETST Microelectronics
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