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Datasheet 3CD3001 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3CD3001 | TO-251 Plastic Encapsulate Transistors JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
3DD13001
FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃)
1. BASE 2. COLLECTOR 3EMITTER
TRANSISTOR (NPN)
TO-251
Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage ju |  Jiangsu Changjiang | transistor |
3CD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3CD1375 | SILICON PNP TRANSISTOR 2SB1375(3CD1375)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频功率放大。
Purpose: Audio frequency power amplifier applications.
特点:饱和压降低，集电极耗散功率大；可与 2SD2012(3DD2012)互补。/Features: Low V ,CE(sat) High PC, complementary pair wit  BLUE ROCKET ELECTRONICS transistor | | |
| 2 | 3CD3001 | TO-251 Plastic Encapsulate Transistors JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
3DD13001
FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃)
1. BASE 2. COLLECTOR 3EMITTER
TRANSISTOR (NPN)
TO-251
Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage ju Jiangsu Changjiang transistor | | |
| 3 | 3CD6D | Silicon Power Transistor Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
3CD6D
DESCRIPTION ¡¤ With TO-3 package ¡¤ Low collector saturation voltage APPLICATIONS ¡¤ For power amplifier and low speed switching applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1  Inchange transistor | | |
| 4 | 3CD834 | DIODE Dayan Technology Industry Co., Ltd. Shenzhen
3CD834
1. 2. 3. TO-220
4. 5.
D880 Ta=25 VCBO VCEO VEBO IC PC Tj Tstg -120 -70 -7 -3 1.5 30 150 -55~150 V V V A W W
Ta=25 Tc=25
6.
Ta=25 Min -120 -70 -7 Max V V V µA µA µA V V
BVCBO BVCEO BVEBO ICBO ICEO IEBO VCEsat VBE(ON) hFE1 hFE2 hFE3 fT
www.  Dayan Technology diode | | |
| 5 | 3CD910 | Silicon PNP transistor 3CD910
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-126F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126F Plastic Package.
特征 / Features
饱和压降小,hFE 高且线性好。 Low saturation voltage, excellent hFE linearity and high hFE.
用途 / Applicati BLUE ROCKET ELECTRONICS transistor | | |
| 6 | 3CD910 | SILICON PNP TRANSISTOR 3CD910
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于一般音频放大及低电压调整电路。
Purpose: Audio frequency amplifier, low voltage regulator.
特点:饱和压降小, hFE 高且线性好。
Features: Low saturation voltage, excellent hFE linearity and high hFE.
极  LZG transistor | | |
| 7 | 3CD940 | SILICON PNP TRANSISTOR 2SB940(3CD940)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于功率放大,电视帧偏转输出。/Purpose: Power amplifier, TV vertical deflection output. 特点:击穿电压高，集电极耗散功率高。/Features: High VCEO, large PC.
极限参数/Absolute maximum ratings(Ta LZG transistor | |
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