MPSA42 PDF даташит
Спецификация MPSA42 изготовлена «Philips» и имеет функцию, называемую «(MPSA43) NPN high-voltage transistors». |
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Детали детали
Номер произв | MPSA42 |
Описание | (MPSA43) NPN high-voltage transistors |
Производители | Philips |
логотип |
8 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
MPSA42; MPSA43
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Sep 04
1999 Apr 12
No Preview Available ! |
Philips Semiconductors
NPN high-voltage transistors
Product specification
MPSA42; MPSA43
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Video
• Telephony
• Professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complement: MPSA92.
PINNING
PIN
1 collector
2 base
3 emitter
DESCRIPTION
handbook, halfpage1
2
3
2
MAM279
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
MPSA42
MPSA43
collector-emitter voltage
MPSA42
MPSA43
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
MIN.
MAX.
UNIT
− 300 V
− 200 V
− 300 V
− 200 V
−6V
− 100 mA
− 200 mA
− 100 mA
− 500 mW
−65
+150
°C
− 150 °C
−65
+150
°C
1999 Apr 12
2
No Preview Available ! |
Philips Semiconductors
NPN high-voltage transistors
Product specification
MPSA42; MPSA43
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
MPSA42
MPSA43
IEBO emitter cut-off current
MPSA42
MPSA43
hFE DC current gain
VCEsat
VBEsat
Cc
fT
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
MPSA42
MPSA43
transition frequency
CONDITIONS
MIN.
IE = 0; VCB = 200 V
IE = 0; VCB = 160 V
−
−
IC = 0; VEB = 6 V
IC = 0; VEB = 4 V
VCE = 10 V; note 1
IC = 1 mA
IC = 10 mA
IC = 30 mA
IC = 20 mA; IB = 2 mA; note 1
IC = 20 mA; IB = 2 mA; note 1
IE = ie = 0; VCB = 20 V; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 100 MHz
−
−
25
40
40
−
−
−
−
50
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX. UNIT
100 nA
100 nA
100 nA
100 nA
−
−
−
500 mV
900 mV
3 pF
4 pF
− MHz
1999 Apr 12
3
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