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MPSA42 PDF даташит

Спецификация MPSA42 изготовлена ​​​​«Philips» и имеет функцию, называемую «(MPSA43) NPN high-voltage transistors».

Детали детали

Номер произв MPSA42
Описание (MPSA43) NPN high-voltage transistors
Производители Philips
логотип Philips логотип 

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MPSA42 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
MPSA42; MPSA43
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Sep 04
1999 Apr 12









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MPSA42 Даташит, Описание, Даташиты
Philips Semiconductors
NPN high-voltage transistors
Product specification
MPSA42; MPSA43
FEATURES
Low current (max. 100 mA)
High voltage (max. 300 V).
APPLICATIONS
Video
Telephony
Professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complement: MPSA92.
PINNING
PIN
1 collector
2 base
3 emitter
DESCRIPTION
handbook, halfpage1
2
3
2
MAM279
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
MPSA42
MPSA43
collector-emitter voltage
MPSA42
MPSA43
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C
MIN.
MAX.
UNIT
300 V
200 V
300 V
200 V
6V
100 mA
200 mA
100 mA
500 mW
65
+150
°C
150 °C
65
+150
°C
1999 Apr 12
2









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MPSA42 Даташит, Описание, Даташиты
Philips Semiconductors
NPN high-voltage transistors
Product specification
MPSA42; MPSA43
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
MPSA42
MPSA43
IEBO emitter cut-off current
MPSA42
MPSA43
hFE DC current gain
VCEsat
VBEsat
Cc
fT
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
MPSA42
MPSA43
transition frequency
CONDITIONS
MIN.
IE = 0; VCB = 200 V
IE = 0; VCB = 160 V
IC = 0; VEB = 6 V
IC = 0; VEB = 4 V
VCE = 10 V; note 1
IC = 1 mA
IC = 10 mA
IC = 30 mA
IC = 20 mA; IB = 2 mA; note 1
IC = 20 mA; IB = 2 mA; note 1
IE = ie = 0; VCB = 20 V; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 100 MHz
25
40
40
50
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
MAX. UNIT
100 nA
100 nA
100 nA
100 nA
500 mV
900 mV
3 pF
4 pF
MHz
1999 Apr 12
3










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