A1015 Datasheet PDF - Jiangsu Changjiang
| Part Number | A1015 | |
| Description | PNP Transistor | |
| Manufacturers | Jiangsu Changjiang | |
| Logo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A1015 TRANSISTOR (PNP)
FEATURES
Power dissipation
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction and Storage Temperature
-50
-50
-5
-150
400
-55-150
V
V
V
mA
mW
℃
*These ratings are limiting values above which the serviceability of
any semiconductor device may be impaired.
TO—92
1.EMITTER
2.COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Noise Figure
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Cob
NF
Ic= -100µA, IE=0
Ic= -0. 1 mA, IB=0
IE= -100µA, IC=0
VCB= -50 V IE=0
VCE= -50 V IB=0
VEB= -5 V, IC=0
VCE= -6 V, IC= -2mA
IC= -100mA, IB= -10 mA
IC= -100 mA, IB= -10mA
VCE= -10 V, IC= -1 mA
f =30MHz
VCB=-10V,IE=0
f=1MHZ
VCE= -6 V, IC= -0.1 mA
f =1KHz,RG=10K
-50
-50
-5
70
80
19
MAX UNIT
V
V
V
-0.1 µA
-0.1 µA
-0.1 µA
400
-0.3 V
-1.1 V
MHz
pF
6 dB
CLASSIFICATION OF hFE(1)
Rank
Range
O
70-140
Y
120-240
GR
200-400
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for A1015 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. 150mA, PNP Transistor - Toshiba [ Learn More ] | |
| Download | [ A1015.PDF Datasheet ] | |
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