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PDF MC1496 Data sheet ( Hoja de datos )
| Número de pieza | MC1496 | |
| Descripción | BALANCED MODULATORS/DEMODULATORS | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MC1496, MC1496B
Balanced Modulators/
Demodulators
These devices were designed for use where the output voltage is a
product of an input voltage (signal) and a switching function (carrier).
Typical applications include suppressed carrier and amplitude
modulation, synchronous detection, FM detection, phase detection,
and chopper applications. See ON Semiconductor Application Note
AN531 for additional design information.
Features
• Excellent Carrier Suppression −65 dB typ @ 0.5 MHz
−50 dB typ @ 10 MHz
• Adjustable Gain and Signal Handling
• Balanced Inputs and Outputs
• High Common Mode Rejection −85 dB Typical
• This Device Contains 8 Active Transistors
• Pb−Free Package is Available*
www.DataSheet4U.com
http://onsemi.com
14
1
SOIC−14
D SUFFIX
CASE 751A
14
1
PDIP−14
P SUFFIX
CASE 646
PIN CONNECTIONS
Signal Input 1
Gain Adjust 2
Gain Adjust 3
Signal Input 4
Bias 5
Output 6
N/C 7
14 VEE
13 N/C
12 Output
11 N/C
10 Carrier Input
9 N/C
8 Input Carrier
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 10
1
Publication Order Number:
MC1496/D
1 page  
MC1496, MC1496B
Bias currents flowing into Pins 1, 4, 8 and 10 are transistor
base currents and can normally be neglected if external bias
dividers are designed to carry 1.0 mA or more.
Transadmittance Bandwidth
Carrier transadmittance bandwidth is the 3.0 dB bandwidth
of the device forward transadmittance as defined by:
⎥g21C+
io
(each sideband)
vs (signal)
Vo + 0
Signal transadmittance bandwidth is the 3.0 dB bandwidth
of the device forward transadmittance as defined by:
⎥g21S+
io
vs
(signal)
(signal)
Vc + 0.5 Vdc, Vo + 0
Coupling and Bypass Capacitors
Capacitors C1 and C2 (Figure 5) should be selected for a
reactance of less than 5.0 W at the carrier frequency.
Output Signal
The output signal is taken from Pins 6 and 12 either
balanced or single−ended. Figure 11 shows the output levels
of each of the two output sidebands resulting from variations
in both the carrier and modulating signal inputs with a
single−ended output connection.
Negative Supply
VEE should be dc only. The insertion of an RF choke in
series with VEE can enhance the stability of the internal
current sources.
Signal Port Stability
Under certain values of driving source impedance,
oscillation may occur. In this event, an RC suppression
network should be connected directly to each input using
short leads. This will reduce the Q of the source−tuned
circuits that cause the oscillation.
Signal Input
(Pins 1 and 4)
510
10 pF
An alternate method for low−frequency applications is to
insert a 1.0 kW resistor in series with the input (Pins 1, 4). In
this case input current drift may cause serious degradation
of carrier suppression.
TEST CIRCUITS
VCC
12 Vdc
1.0 k 1.0 k
Re = 1.0 k
Carrier
Input
C2
0.1 mF
VC
VS
Modulating
Signal Input 10 k
51 C1
0.1 mF
10 k 51
Re RL
RL
8 2 1.0 k 3 3.9 k
3.9 k
10
1 MC1496
6
I9 I6
+V o
4 12 −V o
51 14 5
50 k
R1
Carrier Null
I10 I5
V−
−8.0 Vdc
6.8 k
VEE
Figure 5. Carrier Rejection and Suppression
2
0.5 V 8
+ − 10
3
1 MC1496 6
Zin 4
12
14 5
6.8 k
+V
Zout
o
−V o
−8.0 Vdc
NOTE: Shielding of input and output leads may be needed
to properly perform these tests.
Figure 6. Input−Output Impedance
1.0 k
I7
I8
1.0 k I1
I4
VCC
12 Vdc
Re = 1.0 k
2
8
3 2.0 k
I6
10
1 MC1496 6 I9
4 12
14 5
I10 6.8 k
−8.0 Vdc
VEE
Figure 7. Bias and Offset Currents
VCC
1.0 k 1.0 k 12 Vdc
Carrier
Input 0.1 mF
VC
VS
Modulating
Signal Input
10 k
Re 2.0 k
51 0.1 mF
1.0 k
82 3
0.01
50 50 mF
10
1 MC1496 6
4 12
+V o
−V o
10 k 51 51 14
5
50 k 6.8 k
Carrier Null
V−
−8.0 Vdc
VEE
Figure 8. Transconductance Bandwidth
http://onsemi.com
5
5 Page 
MC1496, MC1496B
1.0 k 1.0 k
0.001 mF
Local
Oscillator
Input
51
2
8
10
0.01
mF
3
6
100 mVrms
0.001 mF 1 MC1496
RF Input
51
4
10 k
10 k 51
50 k
Null Adjust
12
14 5 5.0−80
pF
6.8 k
VEE
−8.0 Vdc
VCC
+8.0 Vdc
RFC
100 mH
0.001 mF
9.5 mF
L1
9.0 MHz
Output
RL = 50W
90−480 pF
L1 = 44 Turns AWG No. 28 Enameled Wire, Wound
on Micrometals Type 44−6 Toroid Core.
+ 100 mF
1.0 k − 25 Vdc
1.0 k
23
1.0 k C2
100
8
10
Input
15 mVrms
100 mF
15 Vdc Max
− C2+
100 mF 15 Vdc 1
MC1496
4
10 k 10 k
50 k
100 100 14
5
Balance
I5
VEE
−8.0 Vdc
3.9 k
6
12
6.8 k
Figure 29. Doubly Balanced Mixer
(Broadband Inputs, 9.0 MHz Tuned Output)
Figure 30. Low−Frequency Doubler
VCC
12 Vdc
3.9 k
Outp
1.0 k 1.0 k
VCC
V+ +8.0 Vdc
100
0.001 mF
150 MHz
Input
100
10 k
10 k
50 k
Balance
0.001
0.001 mF
mF
2
8
18 pF
RFC
0.68 mH
36
10
1 MC1496
4
100 14
12
5
6.8 k
VEE
−8.0 Vdc
L1
18 nH
1.0−10 pF 300 MHz
Output
RL = 50W
1.0−10 pF
L1 = 1 Turn AWG
No. 18 Wire, 7/32″ ID
Figure 31. 150 to 300 MHz Doubler
Frequency
fC
fS
fC ± fS
Carrier Fundamental
Modulating Signal
Fundamental Carrier Sidebands
Balanced Modulator Spectrum
DEFINITIONS
fC ± nfS Fundamental Carrier Sideband Harmonics
nfC Carrier Harmonics
nfC ± nfS Carrier Harmonic Sidebands
http://onsemi.com
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet MC1496.PDF ] | |
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