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PDF SPD03N60S5 Data sheet ( Hoja de datos )
| Número de pieza | SPD03N60S5 | |
| Descripción | Cool MOS Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPD03N60S5 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPU03N60S5
SPD03N60S5
VDS
RDS(on)
ID
P-TO252.
600 V
1.4 Ω
3.2 A
P-TO251.
2
3
1
23
1
Type
SPU03N60S5
SPD03N60S5
Package
P-TO251.
P-TO252.
Ordering Code
Q67040-S4227
Q67040-S4187
Marking
03N60S5
03N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 2.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 3.2 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Value
3.2
2
5.7
100
0.2
3.2
±20
±30
38
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.1
Page 1
2004-03-30
1 page  
SPU03N60S5
SPD03N60S5
1 Power dissipation
Ptot = f (TC)
40 SPU03N60S5
W
32
2 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 1
A
28 10 0
24
20
16
10 -1
tp = 0.001 ms
12 tp = 0.01 ms
tp = 0.1 ms
8
tp = 1 ms
DC
4
00 20 40 60 80 100 120 °C 160
TC
10
-2
10
0
10 1
10 2 V 10 3
VDS
3 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
10 -1
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
A
8 20V
12V
7
6
5
4
3
10V
9V
8.5V
8V
10
-2
10
-5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
2 7.5V
7V
1 6.5V
00 5 10 15 V 25
VDS
Rev. 2.1
Page 5
2004-03-30
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SPD03N60S5.PDF ] | |
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