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BC108 PDF даташит

Спецификация BC108 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS».

Детали детали

Номер произв BC108
Описание LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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BC108 Даташит, Описание, Даташиты
BC107
BC108
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
DESCRIPTION
The BC107 and BC108 are silicon planar
epitaxial NPN transistors in TO-18 metal case.
They are suitable for use in driver stages, low
noise input stages and signal processing circuits
of television reveivers. The PNP complemet for
BC107 is BC177.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEO
V EBO
IC
Ptot
Tstg
Tj
Collect or-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb 25 oC
at Tcase 25 oC
St orage Temperature
Max. Operating Junction Temperature
November 1997
Value
BC107
BC108
50 30
45 20
65
100
0.3
0.75
-55 to 175
175
Unit
V
V
V
mA
W
W
oC
oC
1/6









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BC108 Даташит, Описание, Даташиты
BC107/BC108
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-Case
Rthj- amb Thermal Resistance Junction-Ambient
Max
Max
200
500
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
V(BR)CBO Collect or-Base
Breakdown Voltage
(IE = 0)
for BC107
VCB = 40 V
VCB = 40 V
for BC108
VCB = 20 V
VCB = 20 V
IC = 10 µA
for BC107
for BC108
Tcas e = 150 oC
Tcas e = 150 oC
V( BR)CEO Collect or-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
for BC107
for BC108
V(BR)EBO
VCE(sat )
Em it t er -Base
Breakdown Voltage
(IC = 0)
Co lle ct or- Em it t er
Saturation Voltage
IE = 10 µA
for BC107
for BC108
IC = 10 mA
IC = 100 mA
IB = 0.5 mA
IB = 5 mA
VBE(s at)
V BE(o n )
hFE
Ba se-Em it t er
Saturation Voltage
Base-Emitter O n
Voltage
DC Current G ain
IC = 10 mA IB = 0.5 mA
IC = 100 mA IB = 5 mA
IC = 2 mA
IC = 10 mA
VCE = 5 V
VCE = 5 V
IC = 2 mA
VCE = 5 V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
IC = 10 µA
for BC107
VCE = 5 V
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
hfeSmall Signal Current IC = 2 mA VCE = 5 V f = 1KHz
Gain
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
IC = 10 mA VCE = 10 V f = 100 MHz
Pulsed: Pulse duration = 300 µs, duty cycle 1 %
Min.
50
30
45
20
6
5
550
110
110
200
110
110
200
420
40
40
100
Typ .
70
200
750
950
650
700
120
90
150
120
90
150
270
250
190
300
370
190
300
500
2
M a x.
15
15
15
15
250
600
700
770
450
220
450
800
220
450
800
Unit
nA
µA
µA
µA
V
V
V
V
V
V
mV
mV
mV
mV
mV
mV
2/6









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BC108 Даташит, Описание, Даташиты
BC107/BC108
ELECTRICAL CHARACTERISTICS (continued)
Symb ol
P a ram et er
Test Conditions
CCBO
Collector Base
Capacitance
IE = 0 VCB = 10 V
f = 1MHz
CEBO
Emitter Base
Capacitance
IC = 0 VEB = 0.5 V f = 1MHz
NF Noise Figure
hie Input Impedance
IC = 0.2 mA VCE = 5 V
f = 1KHz Rg = 2KB = 200Hz
IC = 2 mA VCE = 5 V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
f = 1KHz
hre Reverse Voltage Ratio IC = 2 mA VCE = 5 V f = 1KHz
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
hoe Output Admittance
IC = 2 mA VCE = 5 V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
Pulsed: Pulse duration = 300 µs, duty cycle 1 %
f = 1KHz
Min.
Typ .
4
M a x.
6
Unit
pF
12 pF
2 10 dB
4 K
3 K
4.8 K
5.5 K
3 K
4.8 K
7 K
2.2 10-4
1.7 10-4
2.7 10-4
3.1 10-4
1.7 10-4
2.7 10-4
3.8 10-4
30 µS
13 µS
26 µS
30 µS
13 µS
26 µS
34 µS
DC Normalized Current Gain.
Collector--emitter Saturation Voltage.
3/6










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