BC108 PDF даташит
Спецификация BC108 изготовлена «STMicroelectronics» и имеет функцию, называемую «LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS». |
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Детали детали
Номер произв | BC108 |
Описание | LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS |
Производители | STMicroelectronics |
логотип |
6 Pages
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BC107
BC108
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
DESCRIPTION
The BC107 and BC108 are silicon planar
epitaxial NPN transistors in TO-18 metal case.
They are suitable for use in driver stages, low
noise input stages and signal processing circuits
of television reveivers. The PNP complemet for
BC107 is BC177.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEO
V EBO
IC
Ptot
Tstg
Tj
Collect or-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb ≤ 25 oC
at Tcase ≤ 25 oC
St orage Temperature
Max. Operating Junction Temperature
November 1997
Value
BC107
BC108
50 30
45 20
65
100
0.3
0.75
-55 to 175
175
Unit
V
V
V
mA
W
W
oC
oC
1/6
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BC107/BC108
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-Case
Rthj- amb Thermal Resistance Junction-Ambient
Max
Max
200
500
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
V(BR)CBO Collect or-Base
Breakdown Voltage
(IE = 0)
for BC107
VCB = 40 V
VCB = 40 V
for BC108
VCB = 20 V
VCB = 20 V
IC = 10 µA
for BC107
for BC108
Tcas e = 150 oC
Tcas e = 150 oC
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
for BC107
for BC108
V(BR)EBO
VCE(sat )∗
Em it t er -Base
Breakdown Voltage
(IC = 0)
Co lle ct or- Em it t er
Saturation Voltage
IE = 10 µA
for BC107
for BC108
IC = 10 mA
IC = 100 mA
IB = 0.5 mA
IB = 5 mA
VBE(s at)∗
V BE(o n )∗
hFE∗
Ba se-Em it t er
Saturation Voltage
Base-Emitter O n
Voltage
DC Current G ain
IC = 10 mA IB = 0.5 mA
IC = 100 mA IB = 5 mA
IC = 2 mA
IC = 10 mA
VCE = 5 V
VCE = 5 V
IC = 2 mA
VCE = 5 V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
IC = 10 µA
for BC107
VCE = 5 V
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
hfe∗ Small Signal Current IC = 2 mA VCE = 5 V f = 1KHz
Gain
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
IC = 10 mA VCE = 10 V f = 100 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
Min.
50
30
45
20
6
5
550
110
110
200
110
110
200
420
40
40
100
Typ .
70
200
750
950
650
700
120
90
150
120
90
150
270
250
190
300
370
190
300
500
2
M a x.
15
15
15
15
250
600
700
770
450
220
450
800
220
450
800
Unit
nA
µA
µA
µA
V
V
V
V
V
V
mV
mV
mV
mV
mV
mV
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BC107/BC108
ELECTRICAL CHARACTERISTICS (continued)
Symb ol
P a ram et er
Test Conditions
CCBO
Collector Base
Capacitance
IE = 0 VCB = 10 V
f = 1MHz
CEBO
Emitter Base
Capacitance
IC = 0 VEB = 0.5 V f = 1MHz
NF Noise Figure
hie Input Impedance
IC = 0.2 mA VCE = 5 V
f = 1KHz Rg = 2KΩ B = 200Hz
IC = 2 mA VCE = 5 V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
f = 1KHz
hre Reverse Voltage Ratio IC = 2 mA VCE = 5 V f = 1KHz
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
hoe Output Admittance
IC = 2 mA VCE = 5 V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
f = 1KHz
Min.
Typ .
4
M a x.
6
Unit
pF
12 pF
2 10 dB
4 KΩ
3 KΩ
4.8 KΩ
5.5 KΩ
3 KΩ
4.8 KΩ
7 KΩ
2.2 10-4
1.7 10-4
2.7 10-4
3.1 10-4
1.7 10-4
2.7 10-4
3.8 10-4
30 µS
13 µS
26 µS
30 µS
13 µS
26 µS
34 µS
DC Normalized Current Gain.
Collector--emitter Saturation Voltage.
3/6
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