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Datasheet BB182 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BB182 | VHF variable capacitance diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BB182 VHF variable capacitance diode
Product specification 1997 Nov 13
Philips Semiconductors
Product specification
VHF variable capacitance diode
FEATURES • High linearity • Excellent matching to 2% DMA • Ultra small plastic SMD package • C2 |  Philipss | diode |
| 2 | BB182 | VHF variable capacitance diode |  Leshan Radio Company | diode |
| 3 | BB182B | VHF variable capacitance diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BB182B VHF variable capacitance diode
Product specification Supersedes data of 1999 Sep 15 1999 Nov 26
Philips Semiconductors
Product specification
VHF variable capacitance diode
FEATURES • High linearity • Excellent matching to 2% DMA • Ultra | Philipss | diode |
| 4 | BB182B | VHF variable capacitance diode | Leshan Radio Company | diode |
| 5 | BB182LX | VHF variable capacitance diode BB182LX
VHF variable capacitance diode
Rev. 01 — 29 January 2009
Product data sheet
1. Product profile
1.1 General description
The BB182LX is a planar technology variable capacitance diode in a SOD882T ultra small leadless plastic SMD package. The excellent matching perform |  NXP Semiconductors | diode |
BB1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BB101C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-505 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand  Hitachi amplifier | | |
| 2 | BB101M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-504 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand Hitachi amplifier | | |
| 3 | BB102C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-588 (Z) 1st. Edition November 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing Hitachi amplifier | | |
| 4 | BB102M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-587 (Z) 1st. Edition November 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing Hitachi amplifier | | |
| 5 | BB105 | Silicon Planar Signal Diodes Iskra Semic diode | | |
| 6 | BB105A | (BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
 Tele Fun Ken diode | | |
| 7 | BB105B | (BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Tele Fun Ken diode | |
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