BB130 PDF даташит
Спецификация BB130 изготовлена «Philipss» и имеет функцию, называемую «AM variable capacitance diode». |
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Детали детали
Номер произв | BB130 |
Описание | AM variable capacitance diode |
Производители | Philipss |
логотип |
4 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D053
BB130
AM variable capacitance diode
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03
No Preview Available ! |
Philips Semiconductors
AM variable capacitance diode
Product specification
BB130
FEATURES
• Matched to 3%
• Leaded plastic package
• C28: 18 pF; ratio: 27.
APPLICATIONS
• Electronic tuning in AM radio
applications
• VCO.
DESCRIPTION
The BB130 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD69 (TO-92 variant) leaded plastic
package.
handbook, halfpage
k
a MAM222
Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN. MAX. UNIT
VR
continuous reverse voltage
−
30 V
IF
continuous forward current
−
50 mA
Tstg storage temperature
−55 +125 °C
Tj operating junction temperature −55 +85 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IR reverse current
rs diode series resistance
Cd diode capacitance
C--C---d-d---(-(-2-1-8--V-V--)-)-
∆--C--C---d--d-
capacitance ratio
capacitance matching
VR = 30 V; see Fig.3
VR = 30 V; Tj = 85 °C; see Fig.3
f = 1 MHz; note 1
VR = 1 V; f = 1 MHz; see Figs 2 and 4
VR = 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
VR = 1 to 28 V; note 2
Notes
1. VR = 1 V.
2. For a set of 2 diodes.
MIN. TYP. MAX. UNIT
− − 50 nA
− − 300 nA
−−
450 −
2Ω
550 pF
12 −
21 pF
23 −
−
−−3%
1996 May 03
2
No Preview Available ! |
Philips Semiconductors
AM variable capacitance diode
GRAPHICAL DATA
600
handbook, full pagewidth
Cd
(pF)
400
Product specification
BB130
MGC812
200
0
10 −1
f = 1 MHz.
1 10
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
102
handboo1k,0h3alfpage
IR
(nA)
102
MGC809
handboo1k0,
3
halfpage
TC d
(K−1)
10 4
MLC815
10
0
20 40 60 80 100
Tj (oC)
Fig.3 Reverse current as a function of junction
temperature; maximum values.
1996 May 03
3
10 5
10 1 1 10 VR (V) 102
Fig.4 Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
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