DataSheet26.com

BB130 PDF даташит

Спецификация BB130 изготовлена ​​​​«Philipss» и имеет функцию, называемую «AM variable capacitance diode».

Детали детали

Номер произв BB130
Описание AM variable capacitance diode
Производители Philipss
логотип Philipss логотип 

4 Pages
scroll

No Preview Available !

BB130 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D053
BB130
AM variable capacitance diode
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03









No Preview Available !

BB130 Даташит, Описание, Даташиты
Philips Semiconductors
AM variable capacitance diode
Product specification
BB130
FEATURES
Matched to 3%
Leaded plastic package
C28: 18 pF; ratio: 27.
APPLICATIONS
Electronic tuning in AM radio
applications
VCO.
DESCRIPTION
The BB130 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD69 (TO-92 variant) leaded plastic
package.
handbook, halfpage
k
a MAM222
Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN. MAX. UNIT
VR
continuous reverse voltage
30 V
IF
continuous forward current
50 mA
Tstg storage temperature
55 +125 °C
Tj operating junction temperature 55 +85 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IR reverse current
rs diode series resistance
Cd diode capacitance
C--C---d-d---(-(-2-1-8--V-V--)-)-
--C--C---d--d-
capacitance ratio
capacitance matching
VR = 30 V; see Fig.3
VR = 30 V; Tj = 85 °C; see Fig.3
f = 1 MHz; note 1
VR = 1 V; f = 1 MHz; see Figs 2 and 4
VR = 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
VR = 1 to 28 V; note 2
Notes
1. VR = 1 V.
2. For a set of 2 diodes.
MIN. TYP. MAX. UNIT
− − 50 nA
− − 300 nA
−−
450
2
550 pF
12
21 pF
23
−−3%
1996 May 03
2









No Preview Available !

BB130 Даташит, Описание, Даташиты
Philips Semiconductors
AM variable capacitance diode
GRAPHICAL DATA
600
handbook, full pagewidth
Cd
(pF)
400
Product specification
BB130
MGC812
200
0
10 1
f = 1 MHz.
1 10
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
102
handboo1k,0h3alfpage
IR
(nA)
102
MGC809
handboo1k0,
3
halfpage
TC d
(K1)
10 4
MLC815
10
0
20 40 60 80 100
Tj (oC)
Fig.3 Reverse current as a function of junction
temperature; maximum values.
1996 May 03
3
10 5
10 1 1 10 VR (V) 102
Fig.4 Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.










Скачать PDF:

[ BB130.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BB130AM variable capacitance diodePhilipss
Philipss
BB131VHF variable capacitance diodePhilipss
Philipss
BB131VHF variable capacitance diodeNXP Semiconductors
NXP Semiconductors
BB132VHF variable capacitance diodePhilipss
Philipss

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск