BB101C Datasheet PDF - Hitachi
| Part Number | BB101C | |
| Description | Build in Biasing Circuit MOS FET IC UHF RF Amplifier | |
| Manufacturers | Hitachi | |
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BB101C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-505
1st. Edition
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
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Maximum Channel Power
Dissipation Curve
200
150
100
50
0 50 100 150 200
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
25
VDS = VG1 = 5 V
20
15
10
100 1k2Ω10512k082332Ω07k39000kΩ0kΩkkkΩΩΩΩ
RG = 470 kΩ
5
0 1 2345
Gate2 to Source Voltage VG2S (V)
BB101C
Typical Output Characteristics
25
VG2S = 4 V
20 VG1 = VDS
15
10
5
1232310129753k82000000ΩkkkkkkΩΩΩΩΩΩ
RG = 470 kΩ
0 1 2345
Drain to Source Voltage VDS (V)
Drain Current vs. Gate1 Voltage
20
VDS = 5 V
RG = 150 kΩ
16
4V
12 3 V
2V
8
4
VG2S = 1 V
0 1 23 45
Gate1 Voltage VG1 (V)
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BB101C electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BB101C.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| BB101C | The function is Build in Biasing Circuit MOS FET IC UHF RF Amplifier. Hitachi | |
| BB101M | The function is Build in Biasing Circuit MOS FET IC UHF RF Amplifier. Hitachi | |
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