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LM3146 PDF даташит

Спецификация LM3146 изготовлена ​​​​«National Semiconductor» и имеет функцию, называемую «LM3146 High Voltage Transistor Array».

Детали детали

Номер произв LM3146
Описание LM3146 High Voltage Transistor Array
Производители National Semiconductor
логотип National Semiconductor логотип 

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LM3146 Даташит, Описание, Даташиты
February 1995
LM3146 High Voltage Transistor Array
General Description
The LM3146 consists of five high voltage general purpose
silicon NPN transistors on a common monolithic substrate
Two of the transistors are internally connected to form a
differentially-connected pair The transistors are well suited
to a wide variety of applications in low power system in the
dc through VHF range They may be used as discrete tran-
sistors in conventional circuits however in addition they
provide the very significant inherent integrated circuit ad-
vantages of close electrical and thermal matching The
LM3146 is supplied in a 14-lead molded dual-in-line pack-
age for applications requiring only a limited temperature
range
Features
Y High voltage matched pairs of transistors VBE matched
g5 mV input offset current 2 mA max at IC e 1 mA
Y Five general purpose monolithic transistors
Y Operation from dc to 120 MHz
Y Wide operating current range
Y Low noise figure
3 2 dB typ at 1 kHz
Applications
Y General use in all types of signal processing systems
operating anywhere in the frequency range from dc to
VHF
Y Custom designed differential amplifiers
Y Temperature compensated amplifiers
Connection Diagram
Dual-In-Line and Small Outline Packages
Top View
Order Number LM3146M or LM3146N
See NS Package Number M14A or N14A
TL H 7959 – 1
C1995 National Semiconductor Corporation TL H 7959
RRD-B30M115 Printed in U S A









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LM3146 Даташит, Описание, Даташиты
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Power Dissipation Each transistor
TA e 25 C to 55 C
TA l 55 C
Power Dissipation Total Package
TA e 25 C
TA l 25 C
Collector to Emitter Voltage VCEO
Collector to Base Voltage VCBO
Collector to Substrate Voltage
VCIO (Note 1)
Emitter to Base Voltage VEBO
(Note 2)
LM3146
300
Derate at 6 67
500
Derate at 6 67
30
40
40
5
Units
mW
mW C
mW
mW C
V
V
V
V
Collector to Current IC
Operating Temperature Range
50
b40 to a85
mA
C
Storage Temperature Range
b65 to a150 C
Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
260 C
Small Outline Package
Vapor Phase (60 seconds)
Infrared (15 seconds)
215 C
220 C
See AN-450 ‘‘Surface Mounting Methods and Their Effect
on Product Reliability’’ for other methods of soldering sur-
face mount devices
DC Electrical Characteristics TA e 25 C
Symbol
Parameter
Conditions
Limits
Units
Min Typ Max
V(BR)CBO
V(BR)CEO
V(BR)CIO
V(BR)EBO
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Collector to Substrate Breakdown
Voltage
Emitter to Base Breakdown Voltage
(Note 2)
IC e 10 mA IE e 0
IC e 1 mA IB e 0
ICI e 10 mA IB e 0
IE e0
IC e 0 IE e 10 mA
40 72
30 56
40 72
57
V
V
V
V
ICBO
ICEO
hFE
Collector Cutoff Current
Collector Cutoff Current
Static Forward Current Transfer
Ratio (Static Beta)
IB1 – IB2
VBE
VBE1 – VBE2
Input Offset Current for Matched
Pair Q1 and Q2
Base to Emitter Voltage
Magnitude of Input Offset Voltage
for Differential Pair
VCB e 10V IE e 0
VCE e 10V IB e 0
IC e 10 mA VCE e 5V
IC e 1 mA VCE e 5V
IC e 10 mA VCE e 5V
IC1 e 1C2 e 1 mA
VCE e 5V
IC e 1 mA VCE e 3V
VCE e 5V IE e 1 mA
30
0 63
0 002
(Note 3)
85
100
90
03
0 73
0 48
100
5
2
0 83
5
nA
mA
mA
V
mV
DVBE DT
Temperature Coefficient of Base
to Emitter Voltage
VCE e 5V IE e 1 mA
b1 9
mV C
VCE(SAT)
Collector to Emitter Saturation
Voltage
IC e 10 mA IB e 1 mA
0 33
V
DV10 DT
Temperature Coefficient of Input
Offset Voltage
IC e 1 mA VCE e 5V
1 1 mV C
Note 1 The collector of each transistor is isolated from the substrate by an integral diode The substrate must be connected to a voltage which is more negative
than any collector voltage in order to maintain isolation between transistors and provide normal transistor action To avoid undesired coupling between transistors
the substrate terminal should be maintained at either dc or signal (ac) ground A suitable bypass capacitor can be used to establish a signal ground
Note 2 If the transistors are forced into zener breakdown (V(BR)EBO) degradation of forward transfer current ratio (hFE) can occur
Note 3 See curve
2









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LM3146 Даташит, Описание, Даташиты
AC Electrical Characteristics
Symbol
Parameter
Conditions
Limits
Units
Min Typ Max
NF Low Frequency Noise Figure
f e 1 kHz VCE e 5V
IC e 100 mA RS e 1 kX
fT Gain Bandwidth Product
VCE e 5V IC e 3 mA
CEB Emitter to Base Capacitance
VEB e 5V IE e 0
CCB Collector to Base Capacitance
VCB e 5V IC e 0
CCI Collector to Substrate Capacitance VCI e 5V IC e 0
Low Frequency Small Signal Equivalent Circuit Characteristics
3 25
300 500
0 70
0 37
22
dB
MHz
pF
pF
pF
hfe Forward Current Transfer Ratio
hie Short Circuit Input Impedance
hoe Open Circuit Output Impedance
hre Open Circuit Reverse Voltage
Transfer Ratio
Admittance Characteristics
f e 1 kHz VCE e 3V IC e 1 mA
f e 1 kHz VCE e 3V IC e 1 mA
f e 1 kHz VCE e 3V IC e 1 mA
f e 1 kHz VCE e 3V
IC e 1 mA
100
35
15 6
1 8 x 10b4
kX
mmho
Yfe Forward Transfer Admittance
f e 1 MHz VCE e 3V IC e 1 mA
31 b j 1 5
mmho
Yie Input Admittance
f e 1 MHz VCE e 3V IC e 1 mA
0 3 a j 0 04
mmho
Yoe Output Admittance
f e 1 MHz VCE e 3V IC e 1 mA
0 001 a j 0 03
mmho
Yre Reverse Transfer Admittance
f e 1 MHz VCE e 3V IC e 1 mA
(Note 3)
mmho
Note 1 The collector of each transistor is isolated from the substrate by an integral diode The substrate must be connected to a voltage which is more negative
than any collector voltage in order to maintain isolation between transistors and provide normal transistor action To avoid undesired coupling between transistors
the substrate terminal should be maintained at either dc or signal (ac) ground A suitable bypass capacitor can be used to establish a signal ground
Note 2 If the transistors are forced into zener breakdown (V(BR)EBO) degradation of forward transfer current ratio (hFE) can occur
Note 3 See curve
3










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Номер в каталогеОписаниеПроизводители
LM3146LM3146 High Voltage Transistor ArrayNational Semiconductor
National Semiconductor
LM3146MLM3146 High Voltage Transistor ArrayNational Semiconductor
National Semiconductor
LM3146NLM3146 High Voltage Transistor ArrayNational Semiconductor
National Semiconductor

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