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2N2412 PDF даташит

Спецификация 2N2412 изготовлена ​​​​«Central Corp» и имеет функцию, называемую «PNP SILICON TRANSISTOR».

Детали детали

Номер произв 2N2412
Описание PNP SILICON TRANSISTOR
Производители Central Corp
логотип Central Corp логотип 

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2N2412 Даташит, Описание, Даташиты
DATA SHEET
2N2411
2N2412
PNP SILICON TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed
for high speed switching applications.
MAXIMUM RATINGS:
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ,Tstg
ΘJA
ΘJC
SYMBOL
ICES
ICES
IEBO
BVCBO
BVCEO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hfe
Cob
Cib
TEST CONDITIONS
VCE=15V
VCE=15V, TA=150°C
VEB=5.0V
IC=10µA
IC=10mA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=0.5V, IC=50µA
VCE=0.5V, IC=10mA
VCE=0.5V, IC=10mA, TA=-55°C
VCE=1.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
25
15
5.0
100
0.5
1.2
-65 to +200
350
146
2N2411
MIN MAX
10
10
25
15
0.2
0.7 0.9
10
20 60
10
10
1.4
5.0
8.0
2N2412
MIN MAX
10
10
10
25
15
0.2
0.7 0.9
20
40 120
20
20
1.4
5.0
8.0
UNITS
V
V
V
mA
W
W
°C
°C/W
°C/W
UNITS
nA
µA
µA
V
V
V
V
pF
pF
(CONTINUED ON REVERSE SIDE)
R0









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2N2412 Даташит, Описание, Даташиты
2N2411 / 2N2412
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL
TEST CONDITIONS
2N2411
MIN MAX
2N2412
MIN MAX UNITS
td VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300
tr VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300
ton VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300
ts IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300
tf IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300
toff IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300
10 10 ns
20 20 ns
25 25 ns
90 90 ns
20 20 ns
100 100 ns
JEDEC TO-18 CASE - MECHANICAL OUTLINE
A
B
C
D
E
F
LEAD #2
LEAD #1
I
45°
G
H
LEAD #3
J
R1
SYMBOL
A (DIA)
B (DIA)
C
D
E
F (DIA)
G (DIA)
H
I
J
DIMENSIONS
INCHES MILLIMETERS
MIN MAX MIN MAX
0.209 0.230 5.31 5.84
0.178 0.195 4.52 4.95
- 0.030 -
0.76
0.170 0.210 4.32 5.33
0.500 - 12.70 -
0.016 0.019 0.41 0.48
0.100
2.54
0.050
1.27
0.036 0.046 0.91 1.17
0.028 0.048 0.71 1.22
TO-18 (REV: R1)
Lead Code:
1) Emitter
2) Base
3) Collector










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Номер в каталогеОписаниеПроизводители
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2N2412PNP SILICON TRANSISTORCentral Corp
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