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2MBI150SC-120 PDF даташит

Спецификация 2MBI150SC-120 изготовлена ​​​​«Fuji» и имеет функцию, называемую «IGBT MODULE».

Детали детали

Номер произв 2MBI150SC-120
Описание IGBT MODULE
Производители Fuji
логотип Fuji логотип 

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2MBI150SC-120 Даташит, Описание, Даташиты
2MBI150SC-120
IGBT Module
1200V / 150A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltaga
VGES
±20 V
Collector Continuous Tc=25°C IC
200 A
current
Tc=80°C
150 A
1ms Tc=25°C IC pulse
400 A
Tc=80°C
300 A
-IC 150 A
1ms
-IC pulse
300 A
Max. power dissipation
PC
1000
W
Operating temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +125
°C
Isolation voltage *1
Vis AC 2500 (1min. ) V
Screw torque
Mounting *2 3.5 N·m
Terminals *2 3.5 N·m
*1 : Aii terminals should be connected together when isolation test will be done
*2 : Recommendable value : 2.5 to 3.5 N·m(M5)
Equivalent Circuit Schematic
C2E1
C1 E2
G1 E1
G2 E2
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Characteristics
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
Min.
5.5
Typ.
7.2
2.3
Max.
2.0
0.4
8.5
2.6
– 2.8 –
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Cies
Coes
Cres
ton
– 18000
– 3750 –
– 3300 –
– 0.35 1.2
tr – 0.25 0.6
Turn-off time
tr(i) – 0.1 –
toff – 0.45 1.0
Forward on voltage
tf – 0.08 0.3
VF – 2.3 3.0
– 2.0 –
Reverse recovery time trr – – 0.35
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=150mA
Tc=25° C VGE=15V, IC=150A
Tc=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=150A
VGE=±15V
RG=5.6 ohm
Tj=25°C
Tj=125°C
IF=150A
IF=150A, VGE=0V
Thermal resistance characteristics
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
Characteristics
Min.
Typ.
––
––
– 0.025
Conditions
Max.
0.125 IGBT
0.26 Diode
– the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
mA
µA
V
V
pF
µs
V
µs
Unit
°C/W
°C/W
°C/W









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2MBI150SC-120 Даташит, Описание, Даташиты
2MBI150SC-120
Characteristics (Representative)
350
300
250
200
150
100
50
0
0
Collector current vs. Collector-Emiiter voltage
Tj= 25°C (typ.)
VGE= 20V15V 12V
10V
1234
Collector - Emitter voltage : VCE [ V ]
8V
5
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
350
Tj= 25°C Tj= 125°C
300
250
200
150
100
50
0
012345
Collector - Emitter voltage : VCE [ V ]
50000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
10000
5000
Cies
1000
500
0
Coes
Cres
5 10 15 20 25 30
Collector - Emitter voltage : VCE [ V ]
35
IGBT Module
350
300
250
200
150
100
50
0
0
Collector current vs. Collector-Emiiter voltage
Tj= 125°C (typ.)
VGE= 20V 15V 12V
10V
8V
1234
Collector - Emitter voltage : VCE [ V ]
5
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
10
8
6
4
2
0
5
1000
Ic= 300A
Ic= 150A
Ic= 75A
10 15 20
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=150A, Tj= 25°C
25
800
600
400
200
0
0
500
1000
1500
Gate charge : Qg [ nC ]









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2MBI150SC-120 Даташит, Описание, Даташиты
2MBI150SC-120
IGBT Module
1000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 5.6ohm, Tj= 25°C
500 toff
1000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 5.6ohm, Tj= 125°C
toff
500
ton
tr
100
tf
50
0 50 100 150 200 250
Collector current : Ic [ A ]
5000
1000
500
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C
ton
toff
tr
100
50
1
tf
10
Gate resistance : Rg [ ohm ]
100
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C
100
Eon
80
60
40
Eoff
20
Err
0
1 10 100
Gate resistance : Rg [ ohm ]
ton
tr
tf
100
50
0 50 100 150 200 250
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=5.6ohm
40
Eon(125°C)
30
Eon(25°C)
20
Eoff(125°C)
Eoff(25°C)
10
Err(125°C)
Err(25°C)
0
0 100 200 300
Collector current : Ic [ A ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=5.6ohm, Tj<=125°C
350
300
250
200
150
100
50
0
0 200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]










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Номер в каталогеОписаниеПроизводители
2MBI150SC-120IGBT MODULEFuji
Fuji

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