2MBI100N-120 PDF даташит
Спецификация 2MBI100N-120 изготовлена «Fuji» и имеет функцию, называемую «IGBT MODULE ( N series )». |
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Детали детали
Номер произв | 2MBI100N-120 |
Описание | IGBT MODULE ( N series ) |
Производители | Fuji |
логотип |
4 Pages
No Preview Available ! |
IGBT MODULE ( N series )
n Outline Drawing
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5 Times Rated Current)
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
1200
± 20
V
V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
100
200
100
200
780
+150
-40 ∼ +125
A
W
°C
°C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
Mounting *1
Terminals *2
2500
3.5
4.5
V
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
• Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
ICES
Gate-Emitter Leackage Current
IGES
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Saturation Voltage
VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse Transfer capacitance
Cres
Turn-on Time
tON
tr
Turn-off Time
tOFF
tf
Diode Forward On-Voltage
VF
Reverse Recovery Time
trr
Test Conditions
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=100mA
VGE=15V IC=100A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=100A
VGE=± 15V
RG=9.1Ω
IF=100A VGE=0V
IF=100A
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
4.5
Typ.
16000
5800
5160
0.65
0.25
0.85
0.35
Max.
2.0
30
7.5
3.3
1.2
0.6
1.5
0.5
3.0
350
Units
mA
µA
V
V
pF
µs
V
ns
Min.
Typ.
0.025
Max.
0.16
0.43
Units
°C/W
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Collector current vs. Collector-Emitter voltage
Tj=25°C
250
VGE=20V,15V,12V,10V
200
150
100
50 8V
0
012345
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
4 IC=
200A
100A
2 50A
0
0
1000
5 10 15 20
Gate-Emitter voltage : VGE [V]
25
Switching time vs. Collector current
VCC=600V, RG=9.1Ω , VGE±15V, Tj=25°C
tOFF
tON
tf
tr
100
Collector current vs. Collector-Emitter voltage
Tj=125°C
250
VGE=20V,15V,12V,10V
200
150
100
8V
50
0
012345
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4 IC=
200A
100A
2
50A
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
1000
Switching time vs. Collector current
VCC=600V, RG=9.1Ω , VGE=±15V, Tj=125°C
tOFF
tON
tf
tr
100
10
0
50 100 150
Collector current : IC [A]
200
10
0 50 100 150 200
Collector current : IC [A]
No Preview Available ! |
1000
Switching Time vs. RG
VCC=600V, IC=100A, VGE=±15V, Tj=25°C
tOFF
tON
tr
tf
100
10
Gate Resistance : RG [Ω ]
Forward Current vs. Forward Voltage
VGE=0V
250
200 Tj=125°C 25°C
150
100
50
0
012345
Forward Voltage : VF [V]
Transient Thermal Resistance
1
Diode
IGBT
0,1
0,01
0,001
0,001
0,01
0,1
Pulse Width : PW [s]
1
1000
800
600
400
200
0
0
100
Dynamic Input Characteristics
Tj=25°C
25
VCC=400V
600V 20
800V
15
10
5
400 800
Gate Charge : QG [nC]
1200 0
Reverse Recovery Characteristics
trr, Irr vs. IF
trr
125°C
trr
25°C
Irr
125°C
Irr
25°C
10
0 50 100 150 200
Forward Current : IF [A]
1000
Reversed Biased Safe Operating Area
+VGE=15V, -VGE<15V, Tj<125°C, RG>9.1Ω
800
600 SCSOA
(non-repetitive pulse)
400
200
0
0
RBSOA (Repetitive pulse)
200 400 600 800 1000 1200
Collector-Emitter Voltage : VCE [V]
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Номер в каталоге | Описание | Производители |
2MBI100N-120 | IGBT MODULE ( N series ) | Fuji |
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