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PDF 28C011T Data sheet ( Hoja de datos )
| Número de pieza | 28C011T | |
| Descripción | 1 Megabit (128K x 8-Bit) EEPROM | |
| Fabricantes | ETC | |
| Logotipo |  |
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28C011T
1 Megabit (128K x 8-Bit) EEPROM
VCC
VSS
RES
OE
CE
WE
RES
A0
A6
A7
A16
High Voltage
Generator
Control Logic Timing
I/O0
I/O7 RDY/Busy
I/O Buffer and
Input Latch
Address
Buffer and
Latch
Y Decoder
X Decoder
Y Gating
Memory Array
Logic Diagram
Data Latch
FEATURES:
• 128k x 8-bit EEPROM
• RAD-PAK® radiation hardened against natural space radia-
tion
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- No Latchup > 120 MeV/mg/cm2
- SEU > 90 MeV/mg/cm2 read mode
• Package:
- 32-pin RAD-PAK® flat pack package
- JEDEC-approved byte-wide pinout
• High speed:
- 120, 150, and 200 ns maximum access times available
• High endurance:
- 10,000 cycles/byte, 10-year data retention
• Page write mode:
- 1 to 128 byte page
• Low power dissipation
- 20 mW/MHz active (typical)
- 110 µW standby (maximum)
• Screening per TM 5004
• QCI per TM5005
DESCRIPTION:
Maxwell Technologies’ 28C011T high-density 1 Megabit
(128K x 8-Bit) EEPROM microcircuit features a greater than
100 krad (Si) total dose tolerance, depending upon space mis-
sion. The 28C011T is capable of in-system electrical byte and
page programmability. It has a 128-byte page programming
function to make its erase and write operations faster. It also
features Data Polling and a Ready / Busy signal to indicate the
completion of erase and programming operations. In the
28C011T, hardware data protection is provided with the RES
pin, in addition to noise protection on the WE signal and write
inhibit on power on and off. Software data protection is imple-
mented using the JEDEC optional standard algorithm.
Maxwell Technologies' patented RAD-PAK® packaging tech-
nology incorporates radiation shielding in the microcircuit
package. It eliminates the need for box shielding while provid-
ing the required radiation shielding for a lifetime in orbit or
space mission. In a GEO orbit, RAD-PAK provides greater than
100 krad (Si) radiation dose tolerance. This product is avail-
able with screening up to Class S.
1000580
12.19.01 Rev 7
(858) 503-3300- Fax: (858) 503-3301- www.maxwell.com
All data sheets are subject to change without notice 1
©2001 Maxwell Technologies
All rights reserved.
1 page  
1 Megabit (128K x 8-Bit) EEPROM
28C011T
TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR BYTE ERASE AND BYTE WRITE OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
PARAMETER
SYMBOL
MIN1
MAX UNITS
Address Setup Time
-120
-150
-200
tAS
0
0
0
ns
--
--
--
Chip Enable to Write Setup Time (WE controlled)
-120
-150
-200
tCS
0
0
0
ns
--
--
--
Write Pulse Width
CE controlled
-120
-150
-200
WE controlled
-120
-150
-200
tCW
200
250
350
tWP
150
250
350
--
--
--
--
--
--
ns
Address Hold Time
-120
-150
-200
tAH
150
150
200
--
--
--
ns
Data Setup Time
-120
-150
-200
tDS
75
120
200
--
--
--
ns
Data Hold Time
-120
-150
-200
tDH ns
10 --
10 --
20 --
Chip Enable Hold Time (WE controlled)
-120
-150
-200
tCH
0
0
0
-- ns
--
--
Write Enable to Write Setup Time (CE controlled)
-120
-150
-200
tWS
0
0
0
ns
--
--
--
Write Enable Hold Time (CE controlled)
-120
-150
-200
tWH
0
0
0
ns
--
--
--
1000580
12.19.01 Rev 7
All data sheets are subject to change without notice 5
©2001 Maxwell Technologies
All rights reserved.
5 Page 
1 Megabit (128K x 8-Bit) EEPROM
28C011T
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30µs for the second byte. In the same manner each additional byte
of data can be loaded within 30µs. In case CE and WE are kept high for 100 µs after data input, EEPROM enters
erase and write mode automatically and only the input data are written into the EEPROM.
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per-
forming a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle,
the RDY/Busy signal changes state to high impedance.
RES Signal
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping
RES low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch
function.
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
1000580
12.19.01 Rev 7
All data sheets are subject to change without notice 11
©2001 Maxwell Technologies
All rights reserved.
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet 28C011T.PDF ] | |
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