PDF PSMN085-150K Data sheet ( Hoja de datos )

Número de pieza	PSMN085-150K
Descripción	N-channel enhancement mode field-effect transistor
Fabricantes	Philips
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No Preview Available ! PSMN085-150K N-channel enhancement mode ﬁeld-effect transistor Rev. 01 — 16 January 2001 Product speciﬁcation 1. Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN085-150K in SOT96-1 (SO8). 2. Features s Very low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s DC to DC convertor s Computer motherboards s Switch mode power supplies. c c 4. Pinning information Table 1: Pinning - SOT96-1, simpliﬁed outline and symbol Pin Description Simpliﬁed outline 1,2,3 4 source (s) gate (g) 85 5,6,7,8 drain (d) 1 Top view 4 MBK187 SOT96-1 (SO8) Symbol d g MBB076 s 1. SiliconMAX is a trademark of Royal Philips Electronics. 2. TrenchMOS is a trademark of Royal Philips Electronics. 1 page Philips Semiconductors PSMN085-150K N-channel enhancement mode ﬁeld-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise speciﬁed Symbol Parameter Conditions Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage IDSS drain-source leakage current IGSS RDSon gate-source leakage current drain-source on-state resistance Dynamic characteristics ID = 250 µA; VGS = 0 V; Tj = 25 °C ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 150 °C Tj = −55 °C VDS = 120 V; VGS = 0 V; Tj = 25 °C VDS = 150 V; VGS = 0 V; Tj = 150 °C VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 3.5 A; Figure 7 and 8 Tj = 25 °C Tj = 150 °C gfs forward transconductance Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time Source-drain (reverse) diode VDS = 15 V; ID = 4.1 A; Figure 11 ID = 4.1 A; VDD = 75 V; VGS = 10 V; Figure 14 VGS = 0V; VDS = 25V; f = 1 MHz; Figure 12 VDD = 75 V; ID = 1 A; VGS = 10 V; RG = 6 Ω VSD source-drain (diode forward) voltage IS = 2.3 A; VGS = 0 V; Figure 13 trr reverse recovery time IS = 4.1 A; dIS/dt = −100 A/µs; VGS = 0 V Qr recovery charge Min Typ Max Unit 150 180 − V 2− 1.2 − −− −− −− −− 4V −V 6V 1 µA 0.5 mA 100 nA − 67 85 mΩ − 161 204 mΩ − 14 − S − 40 − nC − 4 − nC − 12 17 nC − 1310 − pF − 170 − pF − 80 − pF − 13 30 ns − 17 30 ns − 52 80 ns − 30 45 ns − 0.7 1.1 V − 100 − ns − 0.36 − µC 9397 750 07898 Product speciﬁcation Rev. 01 — 16 January 2001 © Philips Electronics N.V. 2001. All rights reserved. 5 of 13 5 Page Philips Semiconductors 11. Data sheet status PSMN085-150K N-channel enhancement mode ﬁeld-effect transistor Datasheet status Objective speciﬁcation Product status Development Preliminary speciﬁcation Qualiﬁcation Product speciﬁcation Production Deﬁnition [1] This data sheet contains the design target or goal speciﬁcations for product development. Speciﬁcation may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued data sheet before initiating or completing a design. 12. Deﬁnitions 13. Disclaimers Short-form speciﬁcation — The data in a short-form speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed. 9397 750 07898 Product speciﬁcation Rev. 01 — 16 January 2001 © Philips Electronics N.V. 2001 All rights reserved. 11 of 13 11 Page

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