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PDF PSMN057-200B Data sheet ( Hoja de datos )
| Número de pieza | PSMN057-200B | |
| Descripción | N-channel TrenchMOS transistor | |
| Fabricantes | Philips | |
| Logotipo |  |
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Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
PSMN057-200B
FEATURES
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 200 V
ID = 39 A
RDS(ON) ≤ 57 mΩ
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN057-200B is supplied in the SOT404 (D2PAK) surface mounted package.
PINNING - SOT404
PIN DESCRIPTION
1 gate
PIN CONFIGURATION
mb
SYMBOL
d
2 drain
(no connection possible)
3 source
mb drain
2
13
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 kΩ
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
39
27.5
156
250
175
UNIT
V
V
V
A
A
A
W
˚C
December 2000
1
Rev 1.000
1 page  
Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PSMN057-200B
Drain current, ID (A)
40
VDS > ID X RDS(ON)
35
30
25
20 175 C
15
10
5
0
01234
Gate-source voltage, VGS (V)
Tj = 25 C
56
Fig.7. Typical transfer characteristics.
ID = f(VGS)
Transconductance, gfs (S)
50
VDS > ID X RDS(ON)
45
Tj = 25 C
40
35
30 175 C
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40
Drain current, ID (A)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
Normalised On-state Resistance
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Fig.9. Normalised drain-source on-state resistance.
RDS(ON)/RDS(ON)25 ˚C = f(Tj)
Threshold Voltage, VGS(TO) (V)
4.5
4 maximum
3.5
3 typical
2.5
2 minimum
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Drain current, ID (A)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C
5
Capacitances, Ciss, Coss, Crss (pF)
10000
Ciss
1000
Coss
100
0.1
Crss
1 10
Drain-Source Voltage, VDS (V)
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
December 2000
5
Rev 1.000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PSMN057-200B.PDF ] | |
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