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OPT210 PDF даташит

Спецификация OPT210 изготовлена ​​​​«Burr-Brown Corporation» и имеет функцию, называемую «MONOLITHIC PHOTODIODE AND AMPLIFIER 300kHz Bandwidth at RF = 1MW».

Детали детали

Номер произв OPT210
Описание MONOLITHIC PHOTODIODE AND AMPLIFIER 300kHz Bandwidth at RF = 1MW
Производители Burr-Brown Corporation
логотип Burr-Brown Corporation логотип 

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OPT210 Даташит, Описание, Даташиты
®
FPO
OPT210
MONOLITHIC PHOTODIODE AND AMPLIFIER
300kHz Bandwidth at RF = 1M
FEATURES
q BOOTSTRAP ANODE DRIVE:
Extends Bandwidth: 900kHz (RF = 100K)
Reduces Noise
q LARGE PHOTODIODE: 0.09" x 0.09"
q HIGH RESPONSIVITY: 0.45A/W (650nm)
q EXCELLENT SPECTRAL RESPONSE
q WIDE SUPPLY RANGE: ±2.25 to ±18V
q TRANSPARENT DIP, SIP AND SURFACE-
MOUNT PACKAGES
APPLICATIONS
q BARCODE SCANNERS
q MEDICAL INSTRUMENTATION
q LABORATORY INSTRUMENTATION
q POSITION AND PROXIMITY DETECTORS
q PARTICLE DETECTORS
DESCRIPTION
The OPT210 is a photodetector consisting of a high
performance silicon photodiode and precision FET-
input transimpedance amplifier integrated on a single
monolithic chip. Output is an analog voltage propor-
tional to light intensity.
The large 0.09" x 0.09" photodiode is operated at low
bias voltage for low dark current and excellent linear-
ity. A novel photodiode anode bootstrap circuit re-
duces the effects of photodiode capacitance to extend
bandwidth and reduces noise.
The integrated combination of photodiode and
transimpedance amplifier on a single chip eliminates
the problems commonly encountered with discrete
designs such as leakage current errors, noise pick-up
and gain peaking due to stray capacitance.
The OPT210 operates from ±2.25 to ±18V supplies
and quiescent current is only 2mA. Available in a
transparent 8-pin DIP, 8-lead surface-mount and 5-pin
SIP, it is specified for 0° to 70°C operation.
V+
1 (2) 2 (3)
λ +1
RF
OPT210
5
(5)
VO
8 (1)
3 (4)
V–
DIP Pins (SIP Pins)
SPECTRAL RESPONSIVITY
Ultraviolet
0.5
Using External
0.4 1MResistor
0.3
Infrared
0.5
0.4
0.3
0.2 0.2
0.1 0.1
00
100 200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
PDS-11313B
OPT210
®









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OPT210 Даташит, Описание, Даташиты
SPECIFICATIONS
At TA = +25°C, VS = ±15V, λ = 650nm, External RF = 1M, RL = 10k, unless otherwise noted.
OPT210P
OPT210W
PARAMETER
CONDITIONS
MIN TYP
MAX
UNITS
RESPONSIVITY
Photodiode Current
Unit-to-Unit Variation
Voltage Output
Nonlinearity
Photodiode Area
λ = 650nm
λ = 650nm, External RF = 1M
(0.09 x 0.09in)
(2.29 x 2.29mm)
0.45
±5
0.45
0.01
0.008
5.2
A/W
%
V/µW
% of FS
in2
mm2
DARK ERROR, RTO
Offset Voltage
vs Temperature
vs Power Supply
Voltage Noise
VS = ±2.25V to ±18V
BW = 0.01Hz to 100kHz
±2 ±10 mV
±35 µV/°C
100
1000
µV/V
160 µVrms
FREQUENCY RESPONSE
Bandwidth
Rise Time
Settling Time, 1%
0.1%
0.01%
Overload Recovery
External RF = 1M
10% to 90%
FS to Dark step
100% Overdrive
300 kHz
1.2 µs
3 µs
8 µs
20 µs
7 µs
OUTPUT
Voltage Output, Positive
Positive
Negative(1)
Capacitive Load, Stable Operation
Short-Circuit Current(2)
RL = 10k
RL = 5k
RL = 10k
(V+)–1.25
–0.4
(V+)–0.75
(V+)–1
–0.5
500
+50
V
V
pF
mA
POWER SUPPLY
Operating Range
Quiescent Current
±2.25
+2.0/–1.7
±18
±4
V
mA
TEMPERATURE RANGE
Specification
Operating
Storage
θJA
0
0
–25
100
70 °C
70 °C
85 °C
°C/W
NOTES: (1) Output typically swings to 0.5V below the voltage applied to the non-inverting input terminal, which is normally connected to ground. (2) Positive
current (sourcing) is limited. Negative current (sinking) is not limited.
PHOTODIODE SPECIFICATIONS
PARAMETER
Photodiode Area
Current Responsivity
CONDITIONS
(0.09 x 0.09in)
(2.29 x 2.29mm)
λ = 650nm
MIN
Dark Current
vs Temperature
Capacitance
Effective Capacitance(1)
VD = –1.2V
VD = –1.2V
VD = –1.2V
NOTES: (1) Effect of photodiode capacitance is reduced by internal buffer bootstrap drive. See text
PHOTODIODE
TYP
0.008
5.2
0.45
865
70
Doubles every 10°C
550
10
MAX
UNITS
in2
mm2
A/W
µA/W/cm2
pA
pF
pF
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
OPT210
2









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OPT210 Даташит, Описание, Даташиты
OP AMP SPECIFICATIONS
Op amp specifications provided for comparative information only.
PARAMETER
INPUT
Offset Voltage
vs Temperature
vs Power Supply
Input Bias Current
Inverting Input
vs Temperature
Non-inverting Input
NOISE
Voltage Noise
f = 10Hz
f = 100Hz
f = 1kHz
Current Noise Density, Inverting Input
INPUT VOLTAGE RANGE
Common-Mode Input Range(1)
Common-Mode Rejection
INPUT IMPEDANCE
Inverting Input Impedance
Non-Inverting Input Impedance
OPEN-LOOP GAIN
Open-Loop Voltage Gain
FREQUENCY RESPONSE
Bandwidth, Small Signal
Rise Time, Large Signal
Settling Time, 1%
0.1%
0.01%
Overload Recovery
OUTPUT
Voltage Output, Positive
Positive
Negative(1)
Capacitive Load, Stable Operation
Short-Circuit Current(2)
POWER SUPPLY
Operating Voltage
Quiescent Current
CONDITIONS
OP AMP
MIN TYP MAX
±2
±35
100
15
Doubles every 10°C
300
BW = 0.01Hz to 100kHz
VO = 0V to +13.75V
10% to 90%
10V step
100% Overdrive
RL = 10k
RL = 5k
RL = 10k
(V+)–1.25
–0.4
±2.25
20
9
6
0.8
VS±2.25
65
3x1010||3
250
70
35
25
240
390
800
7
(V+)–0.75
(V+)–1
–0.5
500
+50
+1.7/–1.4
±18
±4
UNITS
mV
µV/°C
µV/V
pA
µA
nV/Hz
nV/Hz
nV/Hz
fA/Hz
V
dB
|| pF
k
dB
MHz
ns
ns
ns
ns
µs
V
V
pF
mA
V
mA
NOTES: (1) Output typically swings to 0.5V below the voltage applied to the non-inverting input terminal, which is normally connected to ground. (2) Positive
current (sourcing) is limited. Negative current (sinking) is not limited.
BUFFER SPECIFICATIONS
Buffer specifications provided for comparative information only.
PARAMETER
CONDITIONS
INPUT
Offset Voltage(1)
Input Bias Current
vs Temperature
Input Impedance
FREQUENCY RESPONSE
Bandwidth, Small Signal
OUTPUT
Current
Voltage Gain
POWER SUPPLY
Operating Range
Quiescent Current
NOTE: (1) Intentional voltage offset to reverse bias photodiode.
MIN
±2.25
BUFFER
TYP
–1.2
15
Doubles every 10°C
1011||3
500
±200
0.99
±0.3
MAX
±18
UNITS
V
pA
|| pF
MHz
µA
V/V
V
mA
®
3 OPT210










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Номер в каталогеОписаниеПроизводители
OPT210MONOLITHIC PHOTODIODE AND AMPLIFIER 300kHz Bandwidth at RF = 1MWBurr-Brown Corporation
Burr-Brown Corporation
OPT210PMONOLITHIC PHOTODIODE AND AMPLIFIER 300kHz Bandwidth at RF = 1MWBurr-Brown Corporation
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OPT210WMONOLITHIC PHOTODIODE AND AMPLIFIER 300kHz Bandwidth at RF = 1MWBurr-Brown Corporation
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OPT211MONOLITHIC PHOTODIODE AND AMPLIFIERBurr-Brown Corporation
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