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PDF NDH8301N Data sheet ( Hoja de datos )
| Número de pieza | NDH8301N | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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December 1996
NDH8301N
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage applications such
as notebook computer power management, and other battery
powered circuits where fast switching, and low in-line power
loss are needed in a very small outline surface mount package.
Features
3 A, 20 V. RDS(ON) = 0.06 Ω @ VGS = 4.5 V
RDS(ON) = 0.075 Ω @ VGS = 2.7 V.
Proprietary SuperSOTTM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
____________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise note
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1)
PD Maximum Power Dissipation
(Note 1 )
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
NDH8301N
20
8
3
15
0.8
-55 to 150
156
40
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH8301N Rev.E
1 page  
Typical Electrical Characteristics
1.15
ID = 250µA
1.1
1.05
1
0.95
0.9
-50
-25 0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
5
1
0 .1
0 .0 1
VGS =0V
TJ = 125°C
25°C
-55°C
0 .0 0 1
0 .0 0 0 1
0
0 .2 0 .4 0.6 0 .8
1
V SD , BODY DIODE FORWARD VOLTAGE (V)
1 .2
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
1200
800
500
300
200
Ciss
Coss
100
40
0 .1
f = 1 MHz
VGS = 0V
0 .2 0 .5 1
35
V , DRAIN TO SOURCE VOLTAGE (V)
DS
Crss
10
20
Figure 9. Capacitance Characteristics.
5
ID = 3A
4
3
VDS = 5V
10
15V
2
1
0
0 2 4 6 8 10
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
12
VIN
VGS
RGEN
G
VDD
RL
D
VOUT
DUT
S
t d(on)
t on
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDH8301N Rev.E
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDH8301N.PDF ] | |
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